power MOSFET Jilin Sino Microelectronics JCS5N50FT 220MF designed for LED and lamp ballast circuits
Key Attributes
Model Number:
JCS5N50FT-220MF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Input Capacitance(Ciss):
633pF
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
101W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
JCS5N50FT-220MF
Package:
TO-220F-3
Product Description
N-CHANNEL MOSFET JCS5N50T
The JCS5N50T is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Origin: China
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
|---|---|---|---|---|---|---|
| JCS5N50VT-V-B, JCS5N50VT-V-BR | N/A | IPAK | 5 | 500 | 1.6 | 15 |
| JCS5N50RT-R-B, JCS5N50RT-R-BR, JCS5N50RT-R-A, JCS5N50RT-R-AR | JCS5N50RT | DPAK | 5 | 500 | 1.6 | 15 |
| JCS5N50CT-C-B, JCS5N50CT-C-BR | N/A | TO-220C | 5 | 500 | 1.6 | 15 |
| JCS5N50FT-F-B, JCS5N50FT-F-BR | N/A | TO-220MF | 5 | 500 | 1.6 | 15 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value (JCS5N50VT/RT) | Value (JCS5N50CT) | Value (JCS5N50FT) | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | 500 | 500 | V |
| Drain Current -continuous (T=25) | ID | 5* | 5* | 5* | A |
| Drain Current -continuous (T=100) | ID | 3.16* | 3.16* | 3.16* | A |
| Drain Current - pulse (note 1) | IDM | 20* | 20* | 20* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 305 | 305 | 305 | mJ |
| Avalanche Current (note 1) | IAR | 5 | 5 | 5 | A |
| Repetitive Avalanche Current (note 1) | EAR | 10.1 | 10.1 | 10.1 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | 4.5 | 4.5 | V/ns |
| Power Dissipation (TC=25) | PD | 91 | 101 | 41 | W |
| Power Dissipation -Derate above 25 | 0.73 | 0.81 | 0.33 | W/ | |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.53 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.5A | - | 1.33 | 1.6 | |
| Forward Transconductance | gfs | VDS = 40V, ID=2.5Anote 4 | - | 5.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 492 | 633 | pF |
| Output capacitance | Coss | - | 83 | 110 | pF | |
| Reverse transfer capacitance | Crss | - | 16 | 22 | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=250V,ID=5A,RG=25 note 45 | - | 45 | 60 | ns |
| Turn-On rise time | tr | - | 26 | 34 | ns | |
| Turn-Off delay time | td(off) | - | 133 | 170 | ns | |
| Turn-Off Fall time | tf | - | 214 | 270 | ns | |
| Total Gate Charge | Qg | VDS =400V , ID=5A VGS =10V note 45 | - | 15 | 20 | nC |
| Gate-Source charge | Qgs | - | 3.5 | - | nC | |
| Gate-Drain charge | Qgd | - | 6 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 5 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 20 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=5A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=5A dIF/dt=100A/s (note 4) | - | 268 | - | ns |
| Reverse recovery charge | Qrr | - | 2.1 | - | C | |
Thermal Characteristics
| Parameter | Symbol | Max (JCS5N50VT/RT) | Max (JCS5N50CT) | Max (JCS5N50FT) | Unit |
|---|---|---|---|---|---|
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.38 | 1.23 | 3.08 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 62.5 | 62.5 | /W |
Notes
- Pulse width limited by maximum junction temperature
- L=22mH, IAS=5A, VDD=50V, RG=25 ,Starting TJ=25
- ISD 5A,di/dt 200A/s,VDDBVDSS, Starting TJ=25
- Pulse Test: Pulse Width 300s, Duty Cycle2%
- Essentially independent of operating temperature
2411201840_Jilin-Sino-Microelectronics-JCS5N50FT-220MF_C272533.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
