Silicon bipolar RF transistor Infineon BFQ19SH6327 optimized for antenna systems and broadband amplifier
Key Attributes
Model Number:
BFQ19SH6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
5.5GHz
Type:
NPN
Current - Collector(Ic):
120mA
Collector - Emitter Voltage VCEO:
15V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BFQ19SH6327
Package:
SOT-89-3
Product Description
Product Overview
The BFQ19S is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents ranging from 10 mA to 70 mA. This transistor is Pb-free and RoHS compliant, with qualification reports available according to AEC-Q101.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT89
- Certifications: AEC-Q101 (Qualification report available), RoHS compliant
- Material: Silicon Bipolar
- Type Marking: FG
- ESD Sensitive: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 15 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 3 | V | |
| Collector current | IC | 120 | mA | |
| Base current | IB | 12 | mA | |
| Total power dissipation (TS 85C) | Ptot | 1 | W | |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Thermal Resistance (Junction - soldering point) | RthJS | 65 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics (TA = 25 C, unless otherwise specified) | ||||
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 10 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 100 | A | VEB = 2 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 70 mA, VCE = 8 V, pulse measured |
| AC Characteristics (verified by random sampling) | ||||
| Transition frequency | fT | 4 - 5.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 1.05 - 1.35 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.4 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 3.9 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1.8 - 3 | dB | IC = 20 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz |
| Power gain, maximum available | Gma | 11.5 - 7 | - | IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz |
| Transducer gain | |S21e| | 9.5 - 4 | dB | IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz |
| Third order intercept point at output | IP3 | 32 | dBm | VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| 1dB Compression point | P-1dB | 22 | dBm | VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
2410121757_Infineon-BFQ19SH6327_C150924.pdf
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