SiGe C Technology Infineon BFP 650F H6327 NPN RF Bipolar Transistor for Oscillator and RF Applications
Key Attributes
Model Number:
BFP 650F H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
42GHz
Type:
NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
4V
Mfr. Part #:
BFP 650F H6327
Package:
TSFP-4
Product Description
Product Overview
The BFP650F is a low-profile NPN RF bipolar transistor built on SiGe:C technology, belonging to Infineon's sixth-generation transistor family. It offers a high transition frequency (fT) of 42 GHz and excellent linearity, making it suitable for oscillator applications. This device provides a cost-effective solution without compromising ease of use.
Product Attributes
- Brand: Infineon
- Technology: SiGe:C
- Product Family: Sixth Generation RF Transistors
- Certifications: Qualified for industrial applications according to JEDEC47/20/22.
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings | ||||
| Collector emitter voltage | VCEO | 4.0 | V | Open base; TA = -55 C, open base: 3.7 V |
| Collector emitter voltage | VCES | 13 | V | E-B short circuited |
| Collector base voltage | VCBO | 13 | V | Open emitter |
| Emitter base voltage | VEBO | 1.2 | V | Open collector |
| Base current | IB | 10 | mA | |
| Collector current | IC | 150 | mA | |
| Total power dissipation | Ptot | 500 | mW | TS 85 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Junction - soldering point thermal resistance | RthJS | 130 | K/W | |
| DC Characteristics | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 4 | V | IC = 3 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 100 | A | VCE = 13 V, VBE = 0, E-B short circuited; Maximum values not limited by the device but by the short cycle time of the 100% test. |
| Collector base leakage current | ICBO | 100 | nA | VCB = 5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | 10 | A | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 110 - 270 | VCE = 3 V, IC = 80 mA, pulse measured | |
| General AC Characteristics | ||||
| Transition frequency | fT | 42 | GHz | VCE = 3 V, IC = 80 mA, f = 1 GHz |
| Collector base capacitance | CCB | 0.26 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.45 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 1.3 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| AC Characteristics (VCE = 3 V, f = 1.8 GHz) | ||||
| Maximum power gain | Gms | 21.5 | dB | IC = 80 mA |
| Transducer gain | |S21| | 17.5 | dB | IC = 80 mA |
| Minimum noise figure | NFmin | 0.8 | dB | IC = 10 mA |
| 3rd order intercept point at output | OIP3 | 31 | dBm | IC = 80 mA, ZS = ZL = 50 |
| 1 dB gain compression point at output | OP1dB | 17.5 | dBm | IC = 80 mA |
| AC Characteristics (VCE = 3 V, f = 6 GHz) | ||||
| Maximum power gain | Gms | 11 | dB | IC = 80 mA |
| Transducer gain | |S21| | 7.5 | dB | IC = 80 mA |
| Minimum noise figure | NFmin | 1.9 | dB | IC = 10 mA |
| Device Information | ||||
| Product name / Ordering code | BFP650F / BFP650FH6327XTSA1 | |||
| Package | TSFP-4-1 | |||
| Pin configuration | 1 = B, 2 = E, 3 = C, 4 = E | |||
| Marking | R5s | |||
| Pieces / Reel | 3000 | |||
Potential Applications
- Low noise, high linearity amplifiers in SDARS receivers
- Low noise, high linearity amplifiers for ISM band applications
- Low noise, high linearity amplifiers for multimedia applications such as CATV
2410121550_Infineon-BFP-650F-H6327_C534108.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
