Low noise silicon bipolar RF transistor Infineon BFR193E6327HTSA1 suitable for high gain amplifiers up to 2 GHz
Key Attributes
Model Number:
BFR193E6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
580mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
80mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFR193E6327HTSA1
Package:
SOT-23-3
Product Description
Product Overview
The BFR193 is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It offers a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This device is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is an ESD-sensitive device requiring careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT23
- Certifications: AEC-Q101
- Material: Silicon Bipolar
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 12 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 2 | V | |
| Collector current | IC | 80 | mA | |
| Base current | IB | 10 | mA | |
| Total power dissipation | Ptot | 580 | mW | TS 69C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 140 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics | ||||
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 100 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 1 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 30 mA, VCE = 8 V, pulse measured |
| AC Characteristics | ||||
| Transition frequency | fT | 6 - 8 | GHz | IC = 50 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.66 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.28 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 2.25 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1 - 1.6 | dB | IC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz |
| Power gain, maximum available | Gma | 10 - 15 | dB | IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz |
| Transducer gain | |S21e| | 7.5 - 13 | dB | IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz |
| Third order intercept point at output | IP3 | 30 | dBm | IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz |
| 1dB Compression point | P-1dB | 13 | dBm | IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz |
2410121743_Infineon-BFR193E6327HTSA1_C513261.pdf
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