TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design
Key Attributes
Model Number:
IKW25N120T2
Product Custom Attributes
Pd - Power Dissipation:
349W
Td(off):
265ns
Td(on):
27ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
90pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@1.0mA
Gate Charge(Qg):
120nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
100A
Reverse Recovery Time(trr):
195ns
Switching Energy(Eoff):
1.35mJ
Turn-On Energy (Eon):
1.55mJ
Mfr. Part #:
IKW25N120T2
Package:
TO-247-3
Product Description
IKW25N120T2 TrenchStop 2nd generation Series
The IKW25N120T2 is a 1200V IGBT from Infineon's TrenchStop 2nd generation series, designed for high-performance applications such as frequency converters and uninterrupted power supplies. It features a short circuit withstand time of 10s and offers excellent ruggedness and temperature-stable behavior. The device is easy to parallel due to a positive temperature coefficient in VCE(sat), low EMI, low gate charge, and a very soft, fast recovery anti-parallel Emitter Controlled HE Diode. It is qualified according to JEDEC standards and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TrenchStop 2nd generation
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package |
|---|---|---|---|---|---|---|
| IKW25N120T2 | 1200V | 25A | 1.7V | 175C | K25T1202 | PG-TO-247-3 |
| Parameter | Symbol | Value | Unit | Conditions | |
|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 1200 | V | - | |
| DC collector current (Tj=150C) | IC | 50 / 25 | A | TC = 25C / TC = 110C | |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 100 | A | - | |
| Diode forward current (Tj=150C) | IF | 40 / 25 | A | TC = 25C / TC = 110C | |
| Diode pulsed current, tp limited by Tjmax | IFpuls | 100 | A | - | |
| Gate-emitter voltage | VGE | 20 | V | - | |
| Short circuit withstand time | tSC | 10 | s | VGE = 15V, VCC 600V, Tj, start 175C | |
| Power dissipation | Ptot | 349 | W | TC = 25C | |
| Operating junction temperature | Tj | -40...+175 | C | - | |
| Storage temperature | Tstg | -55...+150 | C | - | |
| Soldering temperature, 1.6mm from case for 10s | - | 260 | C | Wavesoldering only, temperature on leads only | |
| IGBT thermal resistance, junction case | RthJC | 0.43 | K/W | - | |
| Diode thermal resistance, junction case | RthJCD | 0.81 | K/W | - | |
| Thermal resistance, junction ambient | RthJA | 40 | K/W | - | |
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE=0V, IC=500A | |
| Collector-emitter saturation voltage | VCE(sat) | 1.7 / 2.1 / 2.2 | V | VGE = 15V, IC=25A, Tj=25C / 150C / 175C | |
| Diode forward voltage | VF | 1.65 / 1.7 / 2.2 | V | VGE=0V, IF=25A, Tj=25C / 150C / 175C | |
| Gate-emitter threshold voltage | VGE(th) | 5.2 / 5.8 / 6.4 | V | IC=1.0mA,VCE=VGE | |
| Zero gate voltage collector current | ICE | - / 0.4 / 4.0 / 20 | mA | VCE=1200V, VGE=0V, Tj=25C / 150C / 175C | |
| Gate-emitter leakage current | IGE | - | 200 | nA | VCE=0V,VGE=20V |
| Transconductance | gfs | - | 13.5 | S | VCE=20V, IC=25A |
| Input capacitance | Ciss | - | 1600 | pF | VCE=25V, VGE=0V, f=1MHz |
| Output capacitance | Coss | - | 155 | pF | - |
| Reverse transfer capacitance | Crss | - | 90 | pF | - |
| Gate charge | Qg | - | 120 | nC | VCC=960V, IC=25A, VGE=15V |
| Internal emitter inductance | LE | - | 13 | nH | measured 5mm from case |
| Short circuit collector current | IC(SC) | 150 / 115 | A | VGE=15V,tSC10s, VCC = 600V, Tj,start = 25C / 175C | |
| Turn-on delay time | td(on) | 27 | ns | Tj=25C, VCC=600V,IC=25A, VGE=0/15V, RG=16.4 | |
| Rise time | tr | 20 | ns | - | |
| Turn-off delay time | td(off) | 265 | ns | - | |
| Fall time | tf | 95 | ns | - | |
| Turn-on energy | Eon | 1.55 | mJ | - | |
| Turn-off energy | Eoff | 1.35 | mJ | - | |
| Total switching energy | Ets | 2.9 | mJ | - | |
| Diode reverse recovery time | trr | 195 | ns | Tj=25C, VR=600V, IF=25A, diF/dt=1050A/s | |
| Diode reverse recovery charge | Qrr | 2.05 | C | - | |
| Diode peak reverse recovery current | Irr | 20 | A | - | |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 475 | A/s | - |
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Turn-on delay time | td(on) | 25 | ns | Tj=175C, VCC=600V,IC=25A, VGE=0/15V, RG= 16.4 |
| Rise time | tr | 24 | ns | - |
| Turn-off delay time | td(off) | 340 | ns | - |
| Fall time | tf | 164 | ns | - |
| Turn-on energy | Eon | 2.25 | mJ | - |
| Turn-off energy | Eoff | 2.05 | mJ | - |
| Total switching energy | Ets | 4.3 | mJ | - |
| Diode reverse recovery time | trr | 290 | ns | Tj=175C, VR=600V, IF=25A, diF/dt=1000A/s |
| Diode reverse recovery charge | Qrr | 3.65 | C | - |
| Diode peak reverse recovery current | Irr | 24 | A | - |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 330 | A/s | - |
2410121529_Infineon-IKW25N120T2_C111026.pdf
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