Robust Infineon IKW75N60T trenchstop igbt with fast recovery anti parallel emitter controlled diode
Key Attributes
Model Number:
IKW75N60T
Product Custom Attributes
Pd - Power Dissipation:
428W
Td(off):
330ns
Td(on):
33ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@1.2mA
Gate Charge(Qg):
470nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
225A
Reverse Recovery Time(trr):
121ns
Switching Energy(Eoff):
2.5mJ
Turn-On Energy (Eon):
2mJ
Mfr. Part #:
IKW75N60T
Package:
TO-247-3
Product Description
Product Overview
The IKW75N60T is a TRENCHSTOP Series IGBT featuring Low Loss DuoPack technology with an Emitter Controlled HE diode. It offers very low VCE(sat), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. This device is designed for high ruggedness, temperature-stable behavior, and very high switching speeds with low EMI, making it suitable for applications like Frequency Converters and Uninterrupted Power Supplies.
Product Attributes
- Brand: Infineon
- Series: TRENCHSTOP
- Technology: TRENCHSTOP and Fieldstop, Emitter Controlled HE
- Diode Type: Soft, fast recovery anti-parallel Emitter Controlled HE diode
- Lead Plating: Pb-free lead plating
- RoHS Compliant: Yes
- Certifications: Qualified according to JEDEC for target applications
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking | Package |
| IKW75N60T | 600V | 75A | 1.5V | 175C | K75T60 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage, Tj 25C | VCE | 600 | V | |
| DC collector current, limited by Tjmax | IC | TC = 25C | 802) | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | 75 | A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 225 | A | |
| Diode forward current, limited by Tjmax | IF | TC = 25C | 802) | A |
| Diode forward current, limited by Tjmax | IF | TC = 100C | 75 | A |
| Diode pulsed current, tp limited by Tjmax | IFpuls | 225 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Short circuit withstand time | tSC | VGE = 15V, VCC 400V, Tj 150C | 5 | s |
| Power dissipation | Ptot | TC = 25C | 428 | W |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | Tsold | 260 | C | |
| IGBT thermal resistance, junction case | RthJC | 0.35 | K/W | |
| Diode thermal resistance, junction case | RthJC D | 0.6 | K/W | |
| Thermal resistance, junction ambient | RthJA | 40 | K/W | |
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.2mA | 600 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=75A, Tj=25C | 1.5 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=75A, Tj=175C | 1.9 | V |
| Diode forward voltage | VF | VGE=0V, IF=75A, Tj=25C | 1.65 | V |
| Diode forward voltage | VF | VGE=0V, IF=75A, Tj=175C | 1.6 | V |
| Gate-emitter threshold voltage | VGE(th) | IC=1.2mA,VCE=VGE | 4.1...5.7 | V |
| Zero gate voltage collector current | ICEs | VCE=600V, VGE=0V, Tj=25C | 40 | A |
| Zero gate voltage collector current | ICEs | VCE=600V, VGE=0V, Tj=175C | 5000 | A |
| Gate-emitter leakage current | IGEs | VCE=0V,VGE=20V | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=75A | 41 | S |
| Integrated gate resistor | RGint | - | ||
| Input capacitance | Ciss | VCE=25V, VGE=0V, f=1MHz | 4620 | pF |
| Output capacitance | Coss | 288 | pF | |
| Reverse transfer capacitance | Crss | 137 | pF | |
| Gate charge | Qg | VCC=480V, IC=75A, VGE=15V | 470 | nC |
| Internal emitter inductance measured 5mm (0.197 in.) from case | LE | 13 | nH | |
| Short circuit collector current | IC(SC) | VGE=15V,tSC5s, VCC = 400V, Tj 150C | 690 | A |
| Turn-on delay time | td(on) | TJ=25C, VCC=400V,IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF | 33 | ns |
| Rise time | tr | 36 | ns | |
| Turn-off delay time | td(off) | 330 | ns | |
| Fall time | tf | 35 | ns | |
| Turn-on energy | Eon | 2.0 | mJ | |
| Turn-off energy | Eoff | 2.5 | mJ | |
| Total switching energy | Ets | 4.5 | mJ | |
| Diode reverse recovery time | trr | TJ=25C, VR=400V, IF=75A, diF/dt=1460A/s | 121 | ns |
| Diode reverse recovery charge | Qrr | 2.4 | C | |
| Diode peak reverse recovery current | Irr | 38.5 | A | |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 921 | A/s | |
| Turn-on delay time | td(on) | TJ=175C, VCC=400V,IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF | 32 | ns |
| Rise time | tr | 37 | ns | |
| Turn-off delay time | td(off) | 363 | ns | |
| Fall time | tf | 38 | ns | |
| Turn-on energy | Eon | 2.9 | mJ | |
| Turn-off energy | Eoff | 2.9 | mJ | |
| Total switching energy | Ets | 5.8 | mJ | |
| Diode reverse recovery time | trr | TJ=175C, VR=400V, IF=75A, diF/dt=1460A/s | 182 | ns |
| Diode reverse recovery charge | Qrr | 5.8 | C | |
| Diode peak reverse recovery current | Irr | 56.2 | A | |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 1013 | A/s |
2410121813_Infineon-IKW75N60T_C44294.pdf
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