NPN PNP Transistor Array Infineon BCR22PNH6327XTSA1 with Built in Resistors and Compact SOT363 Package

Key Attributes
Model Number: BCR22PNH6327XTSA1
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR22PNH6327XTSA1
Package:
SOT-363-6
Product Description

Product Overview

The BCR22PN is an NPN/PNP Silicon Digital Transistor Array designed for switching circuits, inverters, interface circuits, and driver circuits. It features two internally isolated NPN and PNP transistors within a single package, each with built-in bias resistors (R1=22 k, R2=22 k). This Pb-free (RoHS compliant) and AEC Q101 qualified component offers a compact SOT363 package.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Certifications: AEC Q101, RoHS compliant

Technical Specifications

ParameterSymbolNPN/PNP TypeValueUnitConditions
Maximum RatingsVCEOCollector-emitter voltage50V
VCBOCollector-base voltage50V
Vi(fwd)Input forward voltage60V
Vi(rev)Input reverse voltage10V
ICDC collector current100mA
PtotTotal power dissipation250mWTS = 115 C
TjJunction temperature150C
DC CharacteristicsV(BR)CEOCollector-emitter breakdown voltage50VIC = 100 A, IB = 0
V(BR)CBOCollector-base breakdown voltage50VIC = 10 A, IE = 0
ICBOCollector cutoff current-100nAVCB = 40 V, IE = 0
IEBOEmitter cutoff current-350AVEB = 10 V, IC = 0
hFEDC current gain50-IC = 5 mA, VCE = 5 V
VCEsatCollector-emitter saturation voltage-0.3VIC = 10 mA, IB = 0.5 mA
Vi(off)Input off voltage0.81.5VIC = 100 A, VCE = 5 V
Vi(on)Input on Voltage12.5VIC = 2 mA, VCE = 0.3 V
R1Input resistor152229k
R1/R2Resistor ratio0.911.1-
AC CharacteristicsfTTransition frequency-130MHzIC = 10 mA, VCE = 5 V, f = 100 MHz
CcbCollector-base capacitance-3pFVCB = 10 V, f = 1 MHz

2410121930_Infineon-BCR22PNH6327XTSA1_C672245.pdf

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