Industrial Reverse Conducting IGBT Infineon IHW40N65R6 with Low EMI and Tight Parameter Distribution
Reverse-Conducting IGBT with monolithic body diode
This Reverse-Conducting IGBT offers a complete product spectrum with PSpice models available. It features easy parallel switching capability due to its positive temperature coefficient in VCEsat, high ruggedness, and stable temperature behavior. The device boasts low EMI, Pb-free lead plating, and is RoHS compliant. It includes a powerful monolithic reverse-conducting diode with a low forward voltage, very low VCEsat, and low Eoff, along with very tight parameter distribution. Suitable for applications like Induction Cooking and Microwave Ovens, this product is qualified for industrial applications according to JEDEC standards.
Product Attributes
- Brand: Infineon
- Certifications: RoHS compliant
- Material: Pb-free lead plating
Technical Specifications
| Type | Package | Marking | VCEsat (Typ. @ 25C) | VGEth (Typ.) | IC (Typ. @ 25C) | Ptot (Typ. @ 25C) | VCEsat (Typ. @ 175C) | IC (Typ. @ 100C) | Ptot (Typ. @ 100C) | VF (Typ. @ 25C) | VF (Typ. @ 175C) | Rthjc (IGBT) | Rthjc (Diode) |
| IHW40N65R6 | PG-TO247-3 | H40ER6 | 1.29 V | 4.00 V | 83.0 A | 210.0 W | 1.50 V | 54.0 A | 105.0 W | 1.50 V | 1.66 V | 0.71 K/W | 2.77 K/W |
2410121531_Infineon-IHW40N65R6_C20613158.pdf
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