PNP Silicon Digital Transistor with Built-in Bias Resistors and SOT23 Package Infineon BCR553E6327HTSA1

Key Attributes
Model Number: BCR553E6327HTSA1
Product Custom Attributes
Input Resistor:
2.9kΩ
Resistor Ratio:
1.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR553E6327HTSA1
Package:
SOT-23
Product Description

Product Overview

The BCR553 is a PNP Silicon Digital Transistor featuring built-in bias resistors (R1= 2.2 k, R2= 2.2 k). It is Pb-free (RoHS compliant) and qualified according to AEC Q101. This transistor is designed for various digital applications requiring integrated biasing.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: AEC Q101, RoHS compliant
  • Type Marking: XBs

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Collector-emitter voltageVCEO50V
Collector-base voltageVCBO50V
Input forward voltageVi(fwd)20V
Input reverse voltageVi(rev)10V
Collector currentIC500mA
Total power dissipationPtot330mWTS 79 C
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Thermal Resistance
Junction - soldering pointRthJS 215K/W1) For calculation of RthJA please refer to Application Note AN077
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO50VIC = 100 A, IB = 0
Collector-base breakdown voltageV(BR)CBO50VIC = 10 A, IE = 0
Collector-base cutoff currentICBO-100nAVCB = 50 V, IE = 0
Emitter-base cutoff currentIEBO-3.5mAVEB = 10 V, IC = 0
DC current gainhFE40-IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltageVCEsat-0.3VIC = 50 mA, IB = 2.5 mA 1)
Input off voltageVi(off)0.61.5VIC = 100 A, VCE = 5 V
Input on voltageVi(on)11.8VIC = 10 mA, VCE = 0.3 V
Input resistorR11.52.9k
Resistor ratioR1/R20.91.1-
AC Characteristics
Transition frequencyfT-150MHzIC = 50 mA, VCE = 5 V, f = 100 MHz

2410121740_Infineon-BCR553E6327HTSA1_C3588516.pdf

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