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quality Pb free Infineon BB85702VH7902XTSA1 diode designed for stable tuning performance in SAT tuner devices factory
quality Pb free Infineon BB85702VH7902XTSA1 diode designed for stable tuning performance in SAT tuner devices factory

Pb free Infineon BB85702VH7902XTSA1 diode designed for stable tuning performance in SAT tuner devices

Key Attributes
Model Number: BB85702VH7902XTSA1
Product Custom Attributes
Capacitance Ratio:
12.7@C1V/C28V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
30V
Series Resistance (Rs):
1.5Ω
Diode Capacitance:
0.52pF@28V,1MHz
Mfr. Part #:
BB85702VH7902XTSA1
Package:
SC-79-2
Product Description

Product Overview

The BB837/BB857 series are silicon tuning diodes specifically designed for SAT tuners. These diodes feature a high capacitance ratio and low series resistance, ensuring excellent performance in tuning applications. Their uniformity and matching are achieved through an "in-line" matching assembly procedure. The components are Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: Pb-free (RoHS compliant)

Technical Specifications

Model Type Package Configuration Marking
BB837 Diode SOD323 single white
BB857 Diode SCD80 single M
BB857-02V Diode SC79 single OO P
Parameter Symbol Value Unit Notes
Diode reverse voltage VR 30 V
Peak reverse voltage VRM 35 V R 5k
Forward current IF 20 mA
Operating temperature range Top -55 ...150 C
Storage temperature TStg -55 ...150 C
Reverse current IR - nA VR = 30 V, min. typ. max.
Reverse current IR 10 nA VR = 30 V, TA = 85 C, max.
Reverse current IR 200 nA VR = 30 V, TA = 85 C, typ.
Diode capacitance CT 6 pF VR = 1 V, f = 1 MHz, min.
Diode capacitance CT 6.6 pF VR = 1 V, f = 1 MHz, typ.
Diode capacitance CT 7.2 pF VR = 1 V, f = 1 MHz, max.
Diode capacitance CT 0.5 pF VR = 25 V, f = 1 MHz, min.
Diode capacitance CT 0.55 pF VR = 25 V, f = 1 MHz, typ.
Diode capacitance CT 0.65 pF VR = 25 V, f = 1 MHz, max.
Diode capacitance CT 0.45 pF VR = 28 V, f = 1 MHz, min.
Diode capacitance CT 0.52 pF VR = 28 V, f = 1 MHz, typ.
Diode capacitance CT 0.65 pF VR = 28 V, f = 1 MHz, max.
Capacitance ratio CT1/CT25 10.2 - VR = 1 V, VR = 25 V, f = 1 MHz, min.
Capacitance ratio CT1/CT25 12 - VR = 1 V, VR = 25 V, f = 1 MHz, max.
Capacitance ratio CT1/CT28 9.7 - VR = 1 V, VR = 28 V, f = 1 MHz, min.
Capacitance ratio CT1/CT28 12.7 - VR = 1 V, VR = 28 V, f = 1 MHz, max.
Capacitance matching CT/CT 5 % VR = 1V ... 28V, f = 1 MHz, 7 diodes sequence, max. (See Application Note 047)
Series resistance rS 1.5 VR = 5 V, f = 470 MHz, typ.

2410121811_Infineon-BB85702VH7902XTSA1_C3272467.pdf

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