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quality Silicon Variable Capacitance Diode Infineon BB 639 E7904 with High Capacitance Ratio and Uniformity factory
quality Silicon Variable Capacitance Diode Infineon BB 639 E7904 with High Capacitance Ratio and Uniformity factory

Silicon Variable Capacitance Diode Infineon BB 639 E7904 with High Capacitance Ratio and Uniformity

Key Attributes
Model Number: BB 639 E7904
Product Custom Attributes
Capacitance Ratio:
14.7;10.4
Diode Configuration:
1 Independent
DC Reverse Voltage(Vr):
30V
Series Resistance (Rs):
650mΩ
Diode Capacitance:
38.3pF@1V,1MHz;29.75pF@2V,1MHz;2.85pF@25V,1MHz;2.6pF@28V,1MHz
Mfr. Part #:
BB 639 E7904
Package:
SOD-323
Product Description

Product Overview

The BB639/BB659 are Silicon Variable Capacitance Diodes designed for tuning extended frequency bands in VHF TV and VTR tuners. These diodes offer a high capacitance ratio, low series inductance, and low series resistance. Their excellent uniformity and matching are achieved through an "in-line" matching assembly procedure. The components are Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Compliance: Pb-free (RoHS compliant)
  • Assembly Procedure: "in-line" matching

Technical Specifications

Model Type Package Configuration LS (nH) Marking
BB639 Diode SOD323 single 1.8 yellow S
BB659 Diode SCD80 single 0.6 DE
Parameter Symbol Value Unit Condition
Diode reverse voltage VR 30 V TA = 25C
Peak reverse voltage VRM 35 V R 5k, TA = 25C
Forward current IF 20 mA TA = 25C
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Reverse current IR - nA VR = 30 V, TA = 25C
Reverse current IR 10 nA VR = 30 V, TA = 85C
Reverse current IR 200 nA VR = 30 V, TA = 85C
Diode capacitance CT 36 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 27.7 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 38.3 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 29.75 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 2.5 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 2.85 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 2.4 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 2.6 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 40 pF VR = 25 V, f = 1 MHz
Diode capacitance CT 31.8 pF VR = 25 V, f = 1 MHz
Diode capacitance CT 3.2 pF VR = 28 V, f = 1 MHz
Diode capacitance CT 2.9 pF VR = 28 V, f = 1 MHz
Capacitance ratio CT1/CT28 13.5 - VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio CT1/CT28 14.7 - VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio CT2/CT25 9.8 - VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio CT2/CT25 10.4 - VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching CT/CT - % VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB639)
Capacitance matching CT/CT 0.3 % VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequence (BB659)
Capacitance matching CT/CT 0.4 % VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB659)
Capacitance matching CT/CT 2.5 % VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB659)
Capacitance matching CT/CT 1 % VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence (BB659)
Series resistance rS - VR = 5 V, f = 470 MHz
Series resistance rS 0.65 VR = 5 V, f = 470 MHz
Series resistance rS 0.7 VR = 5 V, f = 470 MHz
Package Type Dimensions (mm) Footprint (mm)
SCD80 1.7 x 1.3 x 0.8 (approx.) 2.5 x 2.5 (approx.)
SOD323 N/A N/A
Reel Diameter (mm) Pieces per Reel Pitch (mm)
180 3,000 2
180 8,000 2
330 10,000 2

2411220045_Infineon-BB-639-E7904_C533691.pdf

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