Low Reverse Voltage Silicon Tuning Diode Infineon BBY5305WH6327XTSA1554 Hyperabrupt Design Pb Free Package
Key Attributes
Model Number:
BBY5305WH6327XTSA1554
Product Custom Attributes
Capacitance Ratio:
2.2@C1V/C3V
DC Reverse Voltage(Vr):
6V
Diode Configuration:
1 Pair Common Cathode
Diode Capacitance:
3.1pF@3V,1MHz
Mfr. Part #:
BBY5305WH6327XTSA1554
Package:
SOT-323-3
Product Description
Product Overview
The BBY53 is a high Q hyperabrupt tuning diode designed for low tuning voltage operation in VCOs for mobile communications equipment. It features a high ratio at low reverse voltage and is available in a Pb-free (RoHS compliant) package.
Product Attributes
- Brand: Infineon Technologies
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Model | Type | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|---|
| BBY53 | Silicon Tuning Diode | SOT23 | common cathode | 2 | S7s |
| BBY53-02L | Silicon Tuning Diode | TSLP-2-1 | single, leadless | 0.4 | LL |
| BBY53-02V | Silicon Tuning Diode | SC79 | single | 0.6 | L |
| BBY53-02W | Silicon Tuning Diode | SCD80 | single | 0.6 | LL |
| BBY53-03W | Silicon Tuning Diode | SOD323 | single | 1.8 | white |
| BBY53-05W | Silicon Tuning Diode | SOT323 | common cathode | 1.4 | 5 |
| Parameter | Symbol | Value | Unit | Condition | |
|---|---|---|---|---|---|
| Diode reverse voltage | VR | 6 | V | Maximum Rating at TA = 25C | |
| Forward current | IF | 20 | mA | Maximum Rating at TA = 25C | |
| Operating temperature range | Top | -55 ... 125 | C | Maximum Rating | |
| Storage temperature | Tstg | -55 ... 150 | C | Maximum Rating | |
| Reverse current | IR | - | nA | VR = 4 V, TA = 25C | |
| Reverse current | IR | - | 10 | nA | VR = 4 V, TA = 85C |
| Reverse current | IR | - | 200 | nA | VR = 4 V, TA = 85C |
| Diode capacitance | CT | 4.8 | pF | VR = 1 V, f = 1 MHz | |
| Diode capacitance | CT | 5.3 | pF | VR = 1 V, f = 1 MHz | |
| Diode capacitance | CT | 5.8 | pF | VR = 1 V, f = 1 MHz | |
| Diode capacitance | CT | 1.85 | pF | VR = 3 V, f = 1 MHz | |
| Diode capacitance | CT | 2.4 | pF | VR = 3 V, f = 1 MHz | |
| Diode capacitance | CT | 3.1 | pF | VR = 3 V, f = 1 MHz | |
| Capacitance ratio | CT1/CT3 | 1.8 | - | VR = 1 V, VR = 3 V, f = 1 MHz | |
| Capacitance ratio | CT1/CT3 | 2.2 | - | VR = 1 V, VR = 3 V, f = 1 MHz | |
| Capacitance ratio | CT1/CT3 | 2.6 | - | VR = 1 V, VR = 3 V, f = 1 MHz | |
| Series resistance | rS | 0.47 | VR = 1 V, f = 1 GHz |
2410121845_Infineon-BBY5305WH6327XTSA1554_C3272488.pdf
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