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quality Silicon tuning diode Infineon BB535E7908 providing excellent matching and low series inductance for UHF TV tuners factory
quality Silicon tuning diode Infineon BB535E7908 providing excellent matching and low series inductance for UHF TV tuners factory

Silicon tuning diode Infineon BB535E7908 providing excellent matching and low series inductance for UHF TV tuners

Key Attributes
Model Number: BB535E7908
Product Custom Attributes
Capacitance Ratio:
9.8@C1V/C28V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
30V
Diode Capacitance:
2.3pF@28V,1MHz
Mfr. Part #:
BB535E7908
Package:
SOD-323-2
Product Description

Product Overview

The BB535/BB555 series are silicon tuning diodes designed for UHF-TV tuners. They offer a high capacitance ratio, low series inductance, and low series resistance. An 'in-line' matching assembly procedure ensures excellent uniformity and matching between diodes. These components are Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: Pb-free (RoHS compliant)

Technical Specifications

Model Package Configuration LS (nH) Marking
BB535 SOD323 single 1.8 white S
BB555 SCD80 single 0.6 B
BB555/-02V SC79 single 0.6 B
Parameter Symbol Value Unit Condition
Diode reverse voltage VR 30 V -
Peak reverse voltage VRM 35 V R 5k
Forward current IF 20 mA -
Operating temperature range Top -55 ... 150 C -
Storage temperature Tstg -55 ... 150 C -
Reverse current IR - nA VR = 30 V, TA = 85 C
Reverse current IR 10 nA VR = 30 V, TA = 25 C
Diode capacitance CT 17.5 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 14.01 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 2.05 pF VR = 25 V, f = 1 MHz
Diode capacitance CT 1.9 pF VR = 28 V, f = 1 MHz
Capacitance ratio CT1/CT28 8.2 - VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio CT1/CT28 8.9 - VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio CT1/CT28 9.8 - VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio CT2/CT25 6 - VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio CT2/CT25 6.7 - VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio CT2/CT25 7.5 - VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching CT/CT 0.15 % VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB535
Capacitance matching CT/CT 0.25 % VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, BB555/-02V
Capacitance matching CT/CT 2.5 % VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB555/-02V
Series resistance rS 0.58 VR = 3 V, f = 470 MHz
Series resistance rS 0.75 VR = 3 V, f = 470 MHz
Series inductance LS 0.6 nH -
Parameter Symbol Value Unit Condition
Normalized diode capacitance CTA/C25C 0.96 - f = 1MHz, VR = 1V
Normalized diode capacitance CTA/C25C 0.98 - f = 1MHz, VR = 2V
Normalized diode capacitance CTA/C25C 1 - f = 1MHz, VR = 25V
Normalized diode capacitance CTA/C25C 1.02 - f = 1MHz, VR = 28V
Normalized diode capacitance CTA/C25C 1.04 - f = 1MHz, VR = 30V
Temperature coefficient of the diode capacitance TCC -5 x 10-4 1/C f = 1MHz
Temperature coefficient of the diode capacitance TCC -1 x 10-3 1/C f = 1MHz
Reverse current IR 0 pA VR = 28 V, TA = -10 C
Reverse current IR 10 pA VR = 28 V, TA = 10 C
Reverse current IR 100 pA VR = 28 V, TA = 30 C
Reverse current IR 1000 pA VR = 28 V, TA = 50 C
Reverse current IR 10000 pA VR = 28 V, TA = 70 C
Reverse current IR 10 pA TA = 25C, VR = 10V
Reverse current IR 100 pA TA = 25C, VR = 100V
Reverse current IR 1000 pA TA = 25C, VR = 1000V

2411220102_Infineon-BB535E7908_C3272483.pdf

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