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quality Industrial power control IGBT Infineon IHW15N120E1 resonant soft switching reverse conducting device factory
quality Industrial power control IGBT Infineon IHW15N120E1 resonant soft switching reverse conducting device factory

Industrial power control IGBT Infineon IHW15N120E1 resonant soft switching reverse conducting device

Key Attributes
Model Number: IHW15N120E1
Product Custom Attributes
Pd - Power Dissipation:
156W
Td(off):
150ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
20pF
Input Capacitance(Cies):
810pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@0.5mA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
90nC@15V
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
24pF
Switching Energy(Eoff):
30uJ
Mfr. Part #:
IHW15N120E1
Package:
TO-247-3
Product Description

Product Overview

The IHW15N120E1 is a Resonant Soft-Switching Series Reverse conducting IGBT with a monolithic body diode, designed for soft commutation applications. It features TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, and easy parallel switching. This IGBT is Pb-free and RoHS compliant, suitable for industrial power control applications.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM
  • Certifications: JEDEC, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEICVCEsat, Tvj=25CTvjmaxMarkingPackage
IHW15N120E11200V15A1.5V150CH15ME1PG-TO247-3
ParameterSymbolConditionsValueUnit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.50mA1200V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 15.0A, Tvj = 25C1.50V
Diode forward voltageVFVGE = 0V, IF = 15.0A, Tvj = 25C1.90V
Gate-emitter threshold voltageVGE(th)IC = 0.50mA, VCE = VGE4.0V
Zero gate voltage collector currentICESVCE = 1200V, VGE = 0V, Tvj = 25C300A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V100nA
TransconductancegfsVCE = 20V, IC = 15.0A14.0S
Integrated gate resistorrG6.8
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz810pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz24pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz20pF
Gate chargeQGVCC = 960V, IC = 15.0A, VGE = 15V90.0nC
Internal emitter inductanceLEmeasured 5mm from case13.0nH
Turn-off delay timetd(off)Tvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2130ns
Fall timetfTvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.21000ns
Turn-off energy, soft switchingEoffTvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 50.0V/s0.03mJ
Turn-off delay timetd(off)Tvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2150ns
Fall timetfTvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2790ns
Turn-off energy, soft switchingEoffTvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 150.0V/s0.17mJ
Turn-off delay timetd(off)Tvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2140ns
Fall timetfTvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.21800ns
Turn-off energy, soft switchingEoffTvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 50.0V/s0.07mJ
Turn-off delay timetd(off)Tvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2150ns
Fall timetfTvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.21300ns
Turn-off energy, soft switchingEoffTvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 150.0V/s0.36mJ
ParameterSymbolConditionsValueUnit
IGBT thermal resistance, junction - caseRth(j-c)0.80K/W
Diode thermal resistance, junction - caseRth(j-c)0.80K/W
Thermal resistance junction - ambientRth(j-a)40K/W
Power dissipationPtotTC = 25C156.0W
Power dissipationPtotTC = 100C62.2W
Operating junction temperatureTvj-40...+150C
Storage temperatureTstg-55...+150C
Soldering temperature, wave soldering 1.6mm from case for 10s260C
Mounting torque, M3 screwMMaximum of mounting processes0.6Nm

2411141759_Infineon-IHW15N120E1_C536117.pdf

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