Pb Free RoHS Compliant Infineon BB659C02VH7912XTSA1 Silicon Diode for VHF TV and VTR Tuner Applications
Key Attributes
Model Number:
BB659C02VH7912XTSA1
Product Custom Attributes
Capacitance Ratio:
15.3@C1V/C28V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
30V
Diode Capacitance:
2.75pF@28V,1MHz
Mfr. Part #:
BB659C02VH7912XTSA1
Package:
SC-79-2
Product Description
Product Overview
The BB639C/BB659C series are Silicon Variable Capacitance Diodes designed for tuning extended frequency bands in VHF TV/VTR tuners. These diodes feature a high capacitance ratio, low series inductance, and low series resistance. Their excellent uniformity and matching are achieved through an "in-line" matching assembly procedure. The packages are Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Model | Type | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|---|
| BB639C | Diode | SOD323 | single | 1.8 | yellow |
| BB659C | Diode | SCD80 | single | 0.6 | S HH |
| BB659C/-02V | Diode | SC79 | single | 0.6 | H |
Maximum Ratings at TA = 25C, unless otherwise specified
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Diode reverse voltage | VR | 30 | V |
| Peak reverse voltage ( R 5k ) | VRM | 35 | V |
| Forward current | IF | 20 | mA |
| Operating temperature range | Top | -55 ... 150 | C |
| Storage temperature | Tstg | -55 ... 150 | C |
Electrical Characteristics at TA = 25C, unless otherwise specified
| Parameter | Symbol | Values (min.) | Values (typ.) | Values (max.) | Unit |
|---|---|---|---|---|---|
| Reverse current VR = 30 V | IR | - | - | 10 | nA |
| Reverse current VR = 30 V, TA = 85 C | IR | - | - | 200 | nA |
| Diode capacitance VR = 1 V, f = 1 MHz | CT | 36.5 | 39 | 42 | pF |
| Diode capacitance VR = 2 V, f = 1 MHz | CT | 27 | 30.2 | 33.2 | pF |
| Diode capacitance VR = 25 V, f = 1 MHz | CT | 2.5 | 2.72 | 3.05 | pF |
| Diode capacitance VR = 28 V, f = 1 MHz | CT | 2.4 | 2.55 | 2.75 | pF |
| Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz | CT1/CT28 | 14.2 | 15.3 | - | - |
| Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz | CT2/CT25 | 9.5 | 11.1 | - | - |
| Capacitance matching1) VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB639C | CT/CT | - | - | 0.3 | % |
| Capacitance matching VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, BB659C/-02V | CT/CT | - | - | 0.5 | % |
| Capacitance matching VR = 1V to 28V, f = 1 MHz, 7 diodes sequence , BB659C/-02V | CT/CT | - | - | 2.5 | % |
| Series resistance VR = 5 V, f = 470 MHz | rS | - | 0.6 | 0.7 | |
| Series inductance | LS | - | 0.6 | - | nH |
1) For details please refer to Application Note 047
2411200037_Infineon-BB659C02VH7912XTSA1_C3272004.pdf
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