IGBT module Infineon FZ900R12KE4 featuring trench fieldstop IGBT4 technology for motor drive applications
Key Attributes
Model Number:
FZ900R12KE4
Product Custom Attributes
Td(off):
610ns
Pd - Power Dissipation:
4.3kW
Td(on):
240ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
2.2nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@32.0mA
Gate Charge(Qg):
-
Operating Temperature:
-40℃~+150℃
Reverse Recovery Time(trr):
-
Switching Energy(Eoff):
80mJ
Turn-On Energy (Eon):
40mJ
Input Capacitance(Cies):
56nF
Pulsed Current- Forward(Ifm):
1800A
Mfr. Part #:
FZ900R12KE4
Package:
Screw Terminals
Product Description
Product Overview
The FZ900R12KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. Designed for high-power applications, it offers extended operating temperature, low switching losses, high robustness, and a positive temperature coefficient for VCEsat. Its robust mechanical features include 4 kV AC insulation, high creepage and clearance distances, and an isolated base plate, making it suitable for high power converters, motor drives, UPS systems, and wind turbines.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: UL approved (E83335)
Technical Specifications
| Parameter | Unit | Value | Notes |
| Product Series | FZ900R12KE4 | IGBT-modules | |
| Type | IGBT, Inverter | ||
| VCES | V | 1200 | Collector-emitter voltage |
| IC nom | A | 900 | Continuous DC collector current at TC=95C, Tvj max=175C |
| ICRM | A | 1800 | Repetitive peak collector current, tP=1ms |
| Ptot | W | 4300 | Total power dissipation at TC=25C, Tvj max=175C |
| VGES | V | +/-20 | Gate-emitter peak voltage |
| VCEsat | V | 1.75 - 2.10 | Collector-emitter saturation voltage (IC=900A, VGE=15V) |
| VGEth | V | 5.2 - 6.4 | Gate threshold voltage (IC=32.0mA, VCE=VGE, Tvj=25C) |
| QG | C | 7.40 | Gate charge (VGE=-15V...+15V) |
| RGint | 0.9 | Internal gate resistor at Tvj=25C | |
| Cies | nF | 56.0 | Input capacitance (f=1MHz, Tvj=25C, VCE=25V, VGE=0V) |
| Cres | nF | 2.20 | Reverse transfer capacitance (f=1MHz, Tvj=25C, VCE=25V, VGE=0V) |
| ICES | mA | 5.0 | Collector-emitter cut-off current (VCE=1200V, VGE=0V, Tvj=25C) |
| IGES | nA | 400 | Gate-emitter leakage current (VCE=0V, VGE=20V, Tvj=25C) |
| td on | s | 0.24 - 0.26 | Turn-on delay time, inductive load (IC=900A, VCE=600V, VGE=15V, RGon=1.5) |
| tr | s | 0.09 - 0.11 | Rise time, inductive load (IC=900A, VCE=600V, VGE=15V, RGon=1.5) |
| td off | s | 0.61 - 0.66 | Turn-off delay time, inductive load (IC=900A, VCE=600V, VGE=15V, RGoff=0.9) |
| tf | s | 0.10 - 0.15 | Fall time, inductive load (IC=900A, VCE=600V, VGE=15V, RGoff=0.9) |
| Eon | mJ | 40.0 - 60.0 | Turn-on energy loss per pulse (IC=900A, VCE=600V, LS=60nH, VGE=15V, RGon=1.5) |
| Eoff | mJ | 80.0 - 130 | Turn-off energy loss per pulse (IC=900A, VCE=600V, LS=60nH, VGE=15V, RGoff=0.9) |
| ISC | A | 3600 | Short circuit data (VGE15V, VCC=800V, Tvj=150C, tP10s) |
| RthJC (IGBT) | K/W | 0.035 | Thermal resistance, junction to case per IGBT |
| RthCH (IGBT) | K/W | 0.016 | Thermal resistance, case to heatsink per IGBT |
| Tvj op | C | -40 - 150 | Temperature in switching operation |
| VRRM | V | 1200 | Repetitive peak reverse voltage (Diode) |
| IF | A | 900 | Continuous DC forward current (Diode) |
| IFRM | A | 1800 | Repetitive peak forward current (Diode, tP=1ms) |
| It | As | 91000 - 88000 | Limiting state integral (VR=0V, tP=10ms) |
| VF | V | 1.80 - 2.45 | Forward voltage (IF=900A, VGE=0V) |
| IRM | A | 540 - 750 | Peak reverse recovery current (IF=900A, -diF/dt=6000A/s, VR=600V, VGE=-15V) |
| Qr | C | 80.0 - 180 | Recovered charge (IF=900A, -diF/dt=6000A/s, VR=600V, VGE=-15V) |
| Erec | mJ | 40.0 - 85.0 | Reverse recovery energy (IF=900A, -diF/dt=6000A/s, VR=600V, VGE=-15V) |
| RthJC (Diode) | K/W | 0.06 | Thermal resistance, junction to case per diode |
| RthCH (Diode) | K/W | 0.027 | Thermal resistance, case to heatsink per diode |
| VISOL | kV | 4.0 | Isolation test voltage RMS, f=50Hz, t=1min |
| CTI | >400 | Comperative tracking index | |
| RthCH (Module) | K/W | 0.01 | Thermal resistance, case to heatsink per module |
| LsCE | nH | 16 | Stray inductance module |
| RCC'+EE' | m | 0.50 | Module lead resistance, terminals - chip per switch at TC=25C |
| Tstg | C | -40 - 125 | Storage temperature |
| Mounting torque (Module M6) | Nm | 3.00 - 6.00 | For module mounting |
| Terminal connection torque (Screw M4) | Nm | 1.1 | |
| Terminal connection torque (Screw M6) | Nm | 2.5 - 5.0 | |
| Weight | g | 340 |
2411220452_Infineon-FZ900R12KE4_C535656.pdf
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