High power Infineon FF75R12RT4 IGBT module with low switching losses and extended temperature range
Key Attributes
Model Number:
FF75R12RT4
Product Custom Attributes
Pd - Power Dissipation:
395W
Td(off):
300ns
Td(on):
130ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
4.3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@2.4mA
Gate Charge(Qg):
0.57uC
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
150A
Switching Energy(Eoff):
4mJ
Turn-On Energy (Eon):
6mJ
Mfr. Part #:
FF75R12RT4
Package:
Screw Terminals
Product Description
Product Overview
The FF75R12RT4 is a 34mm IGBT module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It is designed for high-power applications, motor drives, and UPS systems, offering advantages such as extended operating temperature, low switching losses, and low VCEsat with a positive temperature coefficient. The module has an isolated base plate and a standard housing.
Product Attributes
- Module Label Code: FF75R12RT4
- Date of Publication: 2013-11-05
- Revision: 2.1
- Preliminary Data
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| IGBT, Inverter | ||||
| Collector-emitter voltage | VCES | 1200 | V | Tvj = 25C |
| Continuous DC collector current | IC nom | 75 | A | TC = 100C, Tvj max = 175C |
| Repetitive peak collector current | ICRM | 150 | A | tP = 1 ms |
| Total power dissipation | Ptot | 395 | W | TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage | VGES | +/-20 | V | |
| Collector-emitter saturation voltage | VCE sat | 1.85, 2.15, 2.25 | V | IC = 75 A, VGE = 15 V; Tvj = 25C, 125C, 150C |
| Gate threshold voltage | VGEth | 5.2, 5.8, 6.4 | V | IC = 2,40 mA, VCE = VGE, Tvj = 25C |
| Gate charge | QG | 0.57 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | RGint | 10 | Tvj = 25C | |
| Input capacitance | Cies | 4.30 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | Cres | 0.25 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | ICES | 1.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | td on | 0.13, 0.15, 0.15 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2.2 ; Tvj = 25C, 125C, 150C |
| Rise time | tr | 0.02, 0.03, 0.035 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2.2 ; Tvj = 25C, 125C, 150C |
| Turn-off delay time | td off | 0.30, 0.38, 0.40 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2.2 ; Tvj = 25C, 125C, 150C |
| Fall time | tf | 0.045, 0.08, 0.09 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2.2 ; Tvj = 25C, 125C, 150C |
| Turn-on energy loss per pulse | Eon | 6.00, 9.50, 10.5 | mJ | IC = 75 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, di/dt = 1900 A/s; Tvj = 25C, 125C, 150C |
| Turn-off energy loss per pulse | Eoff | 4.00, 6.50, 7.00 | mJ | IC = 75 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, du/dt = 3700 V/s; Tvj = 25C, 125C, 150C |
| Short circuit data | ISC | 270 | A | VGE 15 V, VCC = 800 V, VCEmax = VCES -LsCE di/dt; Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (per IGBT) | RthJC | 0.38 | K/W | |
| Thermal resistance, case to heatsink (per IGBT) | RthCH | 0.083 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Temperature under switching conditions | Tvj op | -40 to 150 | C | |
| Diode, Inverter | ||||
| Repetitive peak reverse voltage | VRRM | 1200 | V | Tvj = 25C |
| Continuous DC forward current | IF | 75 | A | |
| Repetitive peak forward current | IFRM | 150 | A | tP = 1 ms |
| It - value | It | 1200, 1100 | As | VR = 0 V, tP = 10 ms; Tvj = 125C, 150C |
| Forward voltage | VF | 1.70, 1.65, 1.65, 2.15 | V | IF = 75 A, VGE = 0 V; Tvj = 25C, 125C, 150C |
| Peak reverse recovery current | IRM | 60.0, 65.0, 70.0 | A | IF = 75 A, - diF/dt = 1900 A/s; VR = 600 V, VGE = -15 V; Tvj = 25C, 125C, 150C |
| Recovered charge | Qr | 7.50, 13.0, 15.0 | C | IF = 75 A, - diF/dt = 1900 A/s; VR = 600 V, VGE = -15 V; Tvj = 25C, 125C, 150C |
| Reverse recovery energy | Erec | 3.00, 4.50, 5.00 | mJ | IF = 75 A, - diF/dt = 1900 A/s; VR = 600 V, VGE = -15 V; Tvj = 25C, 125C, 150C |
| Thermal resistance, junction to case (per diode) | RthJC | 0.58 | K/W | |
| Thermal resistance, case to heatsink (per diode) | RthCH | 0.125 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Temperature under switching conditions | Tvj op | -40 to 150 | C | |
| Module | ||||
| Isolation test voltage | VISOL | 4.0 | kV | RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | |||
| Internal isolation | Al2O3 | Basic insulation (Class 1, IEC 61140) | ||
| Creepage distance (terminal to heatsink) | 17.0 | mm | ||
| Creepage distance (terminal to terminal) | 20.0 | mm | ||
| Clearance (terminal to heatsink) | 17.0 | mm | ||
| Clearance (terminal to terminal) | 9.5 | mm | ||
| Comperative tracking index | CTI | > 200 | ||
| Thermal resistance, case to heatsink (per module) | RthCH | 0.05 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Stray inductance module | LsCE | 30 | nH | |
| Module lead resistance, terminals - chip (per switch) | RCC'+EE' | 0.65 | m | TC = 25C |
| Storage temperature | Tstg | -40 to 125 | C | |
| Mounting torque for module mounting (Screw M6) | 3.00 - 5.00 | Nm | Mounting according to valid application note | |
| Terminal connection torque (Screw M5) | 2.5 - 5.0 | Nm | Mounting according to valid application note | |
| Weight | G | 160 | g | |
| Power Cycling Capability (at Tvjop=125C) | 300,000 cycles @ dTj=50K | According to valid specification for standard modules at Tvjmax=125C | ||
2410121850_Infineon-FF75R12RT4_C541132.pdf
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