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quality IGBT transistor Infineon IKW15N120H3 with low VCEsat and maximum junction temperature rating of 175C factory
quality IGBT transistor Infineon IKW15N120H3 with low VCEsat and maximum junction temperature rating of 175C factory

IGBT transistor Infineon IKW15N120H3 with low VCEsat and maximum junction temperature rating of 175C

Key Attributes
Model Number: IKW15N120H3
Product Custom Attributes
Mfr. Part #:
IKW15N120H3
Package:
TO-247
Product Description

Product Description

The IKW15N120H3 is a high-speed switching IGBT in a DuoPack configuration, featuring TRENCHSTOPTM technology. This technology provides a very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. It is designed for applications requiring high switching frequencies and offers a maximum junction temperature of 175C. The product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM IGBT in Trench and Fieldstop
  • Diode: Soft, fast recovery anti-parallel diode
  • Certifications: JEDEC qualified, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEIC (TC=25C)VCEsat (Tvj=25C)TvjmaxMarkingPackage
IKW15N120H31200V30.0A2.05V175CK15H1203PG-TO247-3
ParameterSymbolConditionsMin.Typ.Max.Unit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.50mA1200--V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 15.0A-2.05-V
Gate-emitter threshold voltageVGE(th)IC = 0.50mA, VCE = VGE5.05.86.5V
Zero gate voltage collector currentICESVCE = 1200V, VGE = 0V, Tvj = 25C--250.0A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V--600nA
TransconductancegfsVCE = 20V, IC = 15.0A-7.5-S
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-875-pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz-75-pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz-45-pF
Gate chargeQGVCC = 960V, IC = 15.0A, VGE = 15V-75.0-nC
Internal emitter inductanceLEmeasured 5mm from case-13.0-nH
Short circuit collector currentIC(SC)VGE = 15.0V, VCC 600V, tSC 10s, Tvj = 175C-52-A
ParameterSymbolConditionsMin.Typ.Max.Unit
Turn-on delay time (Tvj=25C)td(on)Inductive Load-21-ns
Rise time (Tvj=25C)trInductive Load-34-ns
Turn-off delay time (Tvj=25C)td(off)Inductive Load-260-ns
Fall time (Tvj=25C)tfInductive Load-14-ns
Turn-on energy (Tvj=25C)EonInductive Load-1.10-mJ
Turn-off energy (Tvj=25C)EoffInductive Load-0.45-mJ
Total switching energy (Tvj=25C)EtsInductive Load-1.55-mJ
Diode reverse recovery time (Tvj=25C)trrVR = 600V, IF = 15.0A, diF/dt = 500A/s-260-ns
Diode reverse recovery charge (Tvj=25C)QrrVR = 600V, IF = 15.0A, diF/dt = 500A/s-0.80-C
Diode peak reverse recovery current (Tvj=25C)IrrmVR = 600V, IF = 15.0A, diF/dt = 500A/s-7.7-A
Turn-on delay time (Tvj=175C)td(on)Inductive Load-19-ns
Rise time (Tvj=175C)trInductive Load-30-ns
Turn-off delay time (Tvj=175C)td(off)Inductive Load-327-ns
Fall time (Tvj=175C)tfInductive Load-43-ns
Turn-on energy (Tvj=175C)EonInductive Load-1.60-mJ
Turn-off energy (Tvj=175C)EoffInductive Load-0.90-mJ
Total switching energy (Tvj=175C)EtsInductive Load-2.50-mJ
Diode reverse recovery time (Tvj=175C)trrVR = 600V, IF = 15.0A, diF/dt = 500A/s-470-ns
Diode reverse recovery charge (Tvj=175C)QrrVR = 600V, IF = 15.0A, diF/dt = 500A/s-1.70-C
Diode peak reverse recovery current (Tvj=175C)IrrmVR = 600V, IF = 15.0A, diF/dt = 500A/s-9.8-A

2410121747_Infineon-IKW15N120H3_C879991.pdf

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