Power switching device Infineon IKW30N65ES5 with 1.35 volt VCEsat and 650 volt maximum voltage rating
Key Attributes
Model Number:
IKW30N65ES5
Product Custom Attributes
Td(off):
124ns
Pd - Power Dissipation:
188W
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@0.3mA
Gate Charge(Qg):
70nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
75ns
Switching Energy(Eoff):
320uJ
Turn-On Energy (Eon):
560uJ
Input Capacitance(Cies):
1.8nF
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
55pF
Mfr. Part #:
IKW30N65ES5
Package:
TO-247-3
Product Description
Product Overview
The Infineon TRENCHSTOPTM 5 IKW30N65ES5 is a high-speed, soft-switching IGBT designed for demanding industrial applications. It features S5 technology for smooth switching, a low VCEsat of 1.35V, and a 650V breakdown voltage. This device is copacked with a full current-rated RAPID 1 fast and soft antiparallel diode, offering a plug-and-play replacement for previous generations. It is qualified according to JEDEC standards and is RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode: RAPID 1
- Certifications: RoHS compliant, JEDEC qualified
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | IC (TC=100C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKW30N65ES5 | 650V | 62.0A | 39.5A | 1.35V | 175C | K30EES5 | PG-TO247-3 |
2410121815_Infineon-IKW30N65ES5_C536213.pdf
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