Industrial grade igbt Infineon IHW30N160R5 with low emi and temperature stable trenchstop technology
Key Attributes
Model Number:
IHW30N160R5
Product Custom Attributes
Pd - Power Dissipation:
263W
Td(off):
290ns
Collector-Emitter Breakdown Voltage (Vces):
1.6kV
Reverse Transfer Capacitance (Cres):
38pF
Input Capacitance(Cies):
1.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@0.75mA
Gate Charge(Qg):
205nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
42pF
Switching Energy(Eoff):
2mJ
Mfr. Part #:
IHW30N160R5
Package:
TO-247-3
Product Description
Product Overview
The IHW30N160R5 is a Resonant Switching Series Reverse conducting IGBT featuring a powerful monolithic body diode with low forward voltage. It utilizes TRENCHSTOPTM technology for very tight parameter distribution, high ruggedness, temperature stable behavior, low VCEsat, and easy parallel switching capability. This IGBT offers low EMI and is Pb-free, RoHS compliant, and halogen-free. It is qualified for industrial applications.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM
- Compliance: Pb-free lead plating, RoHS compliant, halogen free (according IEC 61249-2-21)
- Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- PSpice Models: http://www.infineon.com/igbt/
Technical Specifications
| Type | VCE (V) | IC (A) | VCEsat, Tvj=25C (V) | Tvjmax (C) | Marking | Package |
|---|---|---|---|---|---|---|
| IHW30N160R5 | 1600 | 30.0 (at Tc=25C) / 39.0 (at Tc=100C) | 1.85 | 175 | H30SR5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-emitter voltage | VCE | Tvj 25C | 1600 | V |
| DC collector current | IC | Tc = 25C | 60.0 | A |
| DC collector current | IC | Tc = 100C | 39.0 | A |
| Pulsed collector current | ICpuls | tp limited by Tvjmax | 90.0 | A |
| Non repetitive peak collector current | ICSM | 1) | 200 | A |
| Turn off safe operating area | VCE 1600V, Tvj 150C, tp = 1s2) | -90.0 | A | |
| Diode forward current | IF | Tc = 25C | 55.0 | A |
| Diode forward current | IF | Tc = 100C | 36.0 | A |
| Diode pulsed current | IFpuls | tp limited by Tvjmax | 90.0 | A |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | tp 10s, D < 0.010 | 25 | V | |
| Power dissipation | Ptot | Tc = 25C | 263.0 | W |
| Power dissipation | Ptot | Tc = 100C | 131.5 | W |
| Operating junction temperature | Tvj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+175 | C | |
| Soldering temperature | wave soldering 1.6mm from case for 10s | 260 | C | |
| Mounting torque | M | M3 screw | 0.6 | Nm |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.57 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | 0.57 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1600 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | 1.85 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 125C | 2.15 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 175C | 2.40 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 25C | 2.00 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 125C | 2.30 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 175C | 2.60 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.75mA, VCE = VGE | 4.5 - 5.8 | V |
| Zero gate voltage collector current | ICES | VCE = 1600V, VGE = 0V, Tvj = 25C | 800 | A |
| Zero gate voltage collector current | ICES | VCE = 1600V, VGE = 0V, Tvj = 175C | 100 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | 20.5 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 1500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 42 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 38 | pF |
| Gate charge | QG | VCC = 1280V, IC = 30.0A, VGE = 15V | 205.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0, L = 175nH, C = 40pF | 290 | ns |
| Fall time | tf | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0, L = 175nH, C = 40pF | 47 | ns |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0, L = 175nH, C = 40pF | 2.00 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 300.0V/s | 0.35 | mJ |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0, L = 175nH, C = 40pF | 330 | ns |
| Fall time | tf | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0, L = 175nH, C = 40pF | 81 | ns |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0, L = 175nH, C = 40pF | 3.00 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 300.0V/s | 1.27 | mJ |
2410121815_Infineon-IHW30N160R5_C536125.pdf
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