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quality EasyPACK power module Infineon FS28MR12W1M1HB11HPSA1 with CoolSiC Trench MOSFET and rugged mounting clamps factory
quality EasyPACK power module Infineon FS28MR12W1M1HB11HPSA1 with CoolSiC Trench MOSFET and rugged mounting clamps factory

EasyPACK power module Infineon FS28MR12W1M1HB11HPSA1 with CoolSiC Trench MOSFET and rugged mounting clamps

Key Attributes
Model Number: FS28MR12W1M1HB11HPSA1
Product Custom Attributes
Mfr. Part #:
FS28MR12W1M1HB11HPSA1
Product Description

Product Overview

The FS28MR12W1M1H_B11 is a preliminary EasyPACK module featuring CoolSiC Trench MOSFET technology. Designed for high-frequency switching applications, this module offers low inductive design and low switching losses. It is suitable for DC/DC converters, motor drives, and UPS systems. The module is qualified for industrial applications according to relevant IEC standards.

Product Attributes

  • Brand: Infineon
  • Technology: CoolSiC Trench MOSFET
  • Package Type: EasyPACK
  • Mounting: Rugged mounting with integrated mounting clamps
  • Contact Technology: PressFIT
  • Integrated Sensor: NTC temperature sensor
  • Product Validation: Qualified for industrial applications (IEC 60747, 60749, 60068)

Technical Specifications

ParameterSymbolNote or test conditionValuesUnit
General Features
Drain-source voltageVDSSTvj = 25 C1200V
Continuous DC drain currentIDDCTvj = 175 C, VGS = 18 V, TH = 80 C30A
Repetitive peak drain currentIDRMverified by design, tp limited by Tvjmax60A
Stray inductance moduleLsCE19nH
Module lead resistance, terminals - chipRCC'+EE'TH = 25 C, per switch5.3m
Storage temperatureTstg-40 to 125C
Mounting force per clampF20 to 50N
WeightG24g
MOSFET Characteristics
Drain-source on-resistanceRDS(on)ID = 30 A, VGS = 18 V, Tvj = 25 C26.4m
Drain-source on-resistanceRDS(on)ID = 30 A, VGS = 18 V, Tvj = 125 C42.8m
Drain-source on-resistanceRDS(on)ID = 30 A, VGS = 18 V, Tvj = 175 C56.8m
Gate threshold voltageVGS(th)ID = 12 mA, VDS = VGS, Tvj = 25 C3.45 to 5.15V
Total gate chargeQGVDD = 800 V, VGS = -3/18 V0.09C
Input capacitanceCISSf = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C2.7nF
Output capacitanceCOSSf = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C0.128nF
Reverse transfer capacitanceCrssf = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C0.009nF
Drain-source leakage currentIDSSVDS = 1200 V, VGS = -3 V, Tvj = 25 C0.02 to 208A
Turn-on energy loss per pulseEonID = 30 A, VDD = 600 V, L = 35 nH, VGS = -3/18 V, RGon = 6.2 , di/dt = 2.7 kA/s (Tvj = 175 C)0.47 to 0.661mJ
Turn-off energy loss per pulseEoffID = 30 A, VDD = 600 V, L = 35 nH, VGS = -3/18 V, RGoff = 5.1 , dv/dt = 25 kV/s (Tvj = 175 C)0.112 to 0.123mJ
Thermal resistance, junction to heat sinkRthJHper MOSFET, grease = 1 W/(mK)1.4K/W
Temperature under switching conditionsTvj op-40 to 175C
Body Diode (MOSFET) Characteristics
DC body diode forward currentISDTvj = 175 C, VGS = -3 V, TH = 80 C15A
Forward voltageVSDISD = 30 A, VGS = -3 V, Tvj = 25 C4.2 to 5.35V
Forward voltageVSDISD = 30 A, VGS = -3 V, Tvj = 175 C3.8V
NTC-Thermistor Characteristics
Rated resistanceR25TNTC = 25 C5k
Deviation of R100R/RTNTC = 100 C, R100 = 493 -5 to 5%
Power dissipationP25TNTC = 25 C20mW
B-valueB25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K

2411261535_Infineon-FS28MR12W1M1HB11HPSA1_C20190965.pdf

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