600V 10A IGBT Module with Short Circuit Withstand Time and Low Gate Charge Infineon IKP10N60T
Key Attributes
Model Number:
IKP10N60T
Product Custom Attributes
Pd - Power Dissipation:
110W
Td(off):
215ns
Td(on):
12ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
17pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.3mA
Gate Charge(Qg):
62nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
30A
Reverse Recovery Time(trr):
115ns
Switching Energy(Eoff):
270uJ
Turn-On Energy (Eon):
160uJ
Mfr. Part #:
IKP10N60T
Package:
TO-220-3
Product Description
Product Overview
The IKP10N60T is a Low Loss DuoPack featuring IGBT in TRENCHSTOP and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. It offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for variable speed drives in washing machines, air conditioners, and induction cooking, as well as Uninterrupted Power Supplies, its TRENCHSTOP and Fieldstop technology provides tight parameter distribution and high ruggedness. The NPT technology ensures easy parallel switching due to a positive temperature coefficient in VCE(sat). It boasts low EMI, low gate charge, and a very soft, fast recovery anti-parallel Emitter Controlled HE diode. The product is qualified according to JEDEC1 for target applications, features Pb-free lead plating, and is RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TRENCHSTOP
- Technology: TRENCHSTOP and Fieldstop, NPT
- Diode Type: Emitter Controlled HE
- Certifications: JEDEC1, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package |
| IKP10N60T | 600V | 10A | 1.5V | 175C | K10T60 | PG-TO-220-3 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter voltage, Tj 25C | VCE | 600 | V | |||
| DC collector current, limited by Tjmax | IC | TC = 25C | 24 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 18 | A | ||
| Pulsed collector current, tp limited by Tjmax | ICpuls | 30 | A | |||
| Diode forward current, limited by Tjmax | IF | TC = 25C | 24 | A | ||
| Diode forward current, limited by Tjmax | IF | TC = 100C | 18 | A | ||
| Diode pulsed current, tp limited by Tjmax | IFpuls | 30 | A | |||
| Gate-emitter voltage | VGE | 20 | V | |||
| Short circuit withstand time | tSC | VGE = 15V, VCC 400V, Tj 150C | 5 | s | ||
| Power dissipation | Ptot | TC = 25C | 110 | W | ||
| Operating junction temperature | Tj | -40 | +175 | C | ||
| Storage temperature | Tstg | -55 | +150 | C | ||
| Soldering temperature, wavesoldering, 1.6 mm (0.063 in.) from case for 10s | 260 | C | ||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.2mA | 600 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=10A, Tj=25C | 1.5 | 1.8 | V | |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=10A, Tj=175C | 2.05 | V | ||
| Diode forward voltage | VF | VG E=0V, IF=10A, T j=25C | 1.6 | V | ||
| Diode forward voltage | VF | VG E=0V, IF=10A, T j=175C | 2.0 | V | ||
| Gate-emitter threshold voltage | VGE(th) | IC=0.3mA,VCE=VGE | 4.1 | 4.6 | 5.7 | V |
| Zero gate voltage collector current | ICEs | VCE=600V, VGE=0V, Tj=25C | 40 | A | ||
| Zero gate voltage collector current | ICEs | VCE=600V, VGE=0V, Tj=175C | 1000 | A | ||
| Gate-emitter leakage current | IGEs | VCE=0V,VGE=20V | 100 | nA | ||
| Transconductance | gfs | VCE=20V, IC=10A | 6 | S | ||
| Input capacitance | Ciss | VCE=25V, VGE=0V, f=1MHz | 551 | pF | ||
| Output capacitance | Coss | 40 | pF | |||
| Reverse transfer capacitance | Crss | 17 | pF | |||
| Gate charge | Qg ate | VCC=480V, IC=10A, VGE=15V | 62 | nC | ||
| Internal emitter inductance | LE | measured 5mm (0.197 in.) from case | 7 | nH | ||
| Short circuit collector current | IC(SC) | VGE=15V,tSC5s, VCC = 400V, Tj = 25C | 100 | A | ||
| Turn-on delay time | td(on) | Tj=25C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF | 12 | ns | ||
| Rise time | tr | 8 | ns | |||
| Turn-off delay time | td(off) | 215 | ns | |||
| Fall time | tf | 38 | ns | |||
| Turn-on energy | Eon | 0.16 | mJ | |||
| Turn-off energy | Eoff | 0.27 | mJ | |||
| Total switching energy | Ets | 0.43 | mJ | |||
| Diode reverse recovery time | trr | Tj=25C, VR=400V, IF=10A, diF/dt=880A/s | 115 | ns | ||
| Diode reverse recovery charge | Qrr | 0.38 | C | |||
| Diode peak reverse recovery current | Irr | 10 | A | |||
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 680 | A/s | |||
| Turn-on delay time | td(on) | Tj=175C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF | 10 | ns | ||
| Rise time | tr | 11 | ns | |||
| Turn-off delay time | td(off) | 233 | ns | |||
| Fall time | tf | 63 | ns | |||
| Turn-on energy | Eon | 0.26 | mJ | |||
| Turn-off energy | Eoff | 0.35 | mJ | |||
| Total switching energy | Ets | 0.61 | mJ | |||
| Diode reverse recovery time | trr | Tj=175C, VR=400V, IF=10A, diF/dt=880A/s | 200 | ns | ||
| Diode reverse recovery charge | Qrr | 0.92 | C | |||
| Diode peak reverse recovery current | Irr | 13 | A | |||
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 390 | A/s |
2410121538_Infineon-IKP10N60T_C536190.pdf
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