Industrial power igbt Infineon IKWH60N65WR6 with low temperature dependence of switching parameters
Key Attributes
Model Number:
IKWH60N65WR6
Product Custom Attributes
Pd - Power Dissipation:
240W
Td(off):
311ns
Td(on):
35ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
19pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.6mA
Operating Temperature:
-40℃~+175℃
Gate Charge(Qg):
174nC@15V
Reverse Recovery Time(trr):
92ns
Switching Energy(Eoff):
850uJ
Turn-On Energy (Eon):
1.82mJ
Input Capacitance(Cies):
4.27nF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
44pF
Mfr. Part #:
IKWH60N65WR6
Package:
TO-247-3
Product Description
Product Overview
The TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This product is designed for high-voltage applications, featuring a monolithic diode optimized for PFC and welding applications. It provides stable temperature behavior, very low VCEsat, low Eoff, and easy paralleling capability due to its positive temperature coefficient in VCEsat. The product exhibits low temperature dependence of VCEsat and Esw, making it suitable for demanding industrial environments.
Product Attributes
- Brand: TRENCHSTOP™ 5 WR6
- Technology: Enhanced creepage and clearance package
- Product Validation: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
| IGBT Characteristics | ||||
| Collector-emitter voltage | VCE | Tvj ≥ 25 °C | 650 | V |
| DC collector current, limited by Tvjmax | IC | Tc = 25 °C | 100 | A |
| DC collector current, limited by Tvjmax | IC | Tc = 100 °C | 63 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpulse | 180 | A | |
| Gate-emitter voltage | VGE | ±20 | V | |
| Power dissipation | Ptot | Tc = 25 °C | 240 | W |
| Power dissipation | Ptot | Tc = 100 °C | 120 | W |
| Collector-emitter breakdown voltage | VBRCES | IC = 0.2 mA, VGE=0 V | 650 | V |
| Collector-emitter saturation voltage | VCEsat | IC = 60 A, VGE = 15 V, Tvj = 25 °C | 1.55 - 1.85 | V |
| Collector-emitter saturation voltage | VCEsat | IC = 60 A, VGE = 15 V, Tvj = 175 °C | 1.8 | V |
| Gate-emitter threshold voltage | VGEth | IC = 0.6 mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate-voltage collector current | ICES | VCE = 650 V, VGE=0 V, Tvj = 25 °C | 40 | µA |
| Zero gate-voltage collector current | ICES | VCE = 650 V, VGE=0 V, Tvj = 175 °C | 0.5 | mA |
| Gate-emitter leakage current | IGES | VCE=0 V, VGE = 20 V | 100 | nA |
| Transconductance | gfs | IC = 60 A, VCE = 20 V | 150 | S |
| Input capacitance | Cies | VCE = 25 V, VGE=0 V, f = 100 kHz | 4270 | pF |
| Output capacitance | Coes | VCE = 25 V, VGE=0 V, f = 100 kHz | 44 | pF |
| Reverse transfer capacitance | Cres | VCE = 25 V, VGE=0 V, f = 100 kHz | 19 | pF |
| Gate charge | QG | IC = 60 A, VGE = 15 V, VCC = 520 V | 174 | nC |
| Turn-on delay time | td(on) | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 25 °C | 35 | ns |
| Turn-on delay time | td(on) | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 175 °C | 32 | ns |
| Rise time (inductive load) | tr | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 25 °C | 28 | ns |
| Rise time (inductive load) | tr | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 175 °C | 30 | ns |
| Turn-off delay time | td(off) | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 25 °C | 311 | ns |
| Turn-off delay time | td(off) | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 175 °C | 344 | ns |
| Fall time (inductive load) | tf | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 25 °C | 23 | ns |
| Fall time (inductive load) | tf | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 175 °C | 20 | ns |
| Turn-on energy | Eon | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 25 °C | 1.82 | mJ |
| Turn-on energy | Eon | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 175 °C | 2.04 | mJ |
| Turn-off energy | Eoff | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 25 °C | 0.85 | mJ |
| Turn-off energy | Eoff | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 175 °C | 1.17 | mJ |
| Total switching energy | Ets | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 25 °C | 2.67 | mJ |
| Total switching energy | Ets | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 Ω, RG(off) = 15 Ω, Lσ = 30 nH, Cσ = 31 pF, IC = 60 A, Tvj = 175 °C | 3.21 | mJ |
| Operating junction temperature | Tvj | -40 - 175 | °C | |
| Diode Characteristics | ||||
| Repetitive peak reverse voltage | VRRM | Tvj ≥ 25 °C | 650 | V |
| Diode forward current, limited by Tvjmax | IF | Tc = 25 °C | 32 | A |
| Diode forward current, limited by Tvjmax | IF | Tc = 100 °C | 19 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpulse | 60 | A | |
| Diode forward voltage | VF | IF = 16 A, Tvj = 25 °C | 1.3 - 1.6 | V |
| Diode forward voltage | VF | IF = 16 A, Tvj = 175 °C | 1.3 | V |
| Diode reverse recovery time | trr | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1700 A/µs, Tvj = 25 °C | 92 | ns |
| Diode reverse recovery time | trr | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1600 A/µs, Tvj = 175 °C | 121 | ns |
| Diode reverse recovery charge | Qrr | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1700 A/µs, Tvj = 25 °C | 2.3 | µC |
| Diode reverse recovery charge | Qrr | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1600 A/µs, Tvj = 175 °C | 3.8 | µC |
| Diode peak reverse recovery current | Irrm | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1700 A/µs, Tvj = 25 °C | 34 | A |
| Diode peak reverse recovery current | Irrm | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1600 A/µs, Tvj = 175 °C | 48.3 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1700 A/µs, Tvj = 25 °C | 450 | A/µs |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400 V, RG(on) = 15 Ω, IF = 30 A, -diF/dt = 1600 A/µs, Tvj = 175 °C | 900 | A/µs |
| Operating junction temperature | Tvj | -40 - 175 | °C | |
| Package & General Characteristics | ||||
| Pin-to-pin creepage distance | > 4.8 | mm | ||
| Pin-to-pin clearance distance | > 3.4 | mm | ||
| Internal emitter inductance | LE | measured 5 mm (0.197 in.) from case | 13 | nH |
| Storage temperature | Tstg | -55 - 150 | °C | |
| Soldering temperature | Tsold | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 260 | °C |
| Mounting torque | M | M3 screw, Maximum of mounting process | 0.6 | Nm |
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | |
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.6 | K/W | |
| Diode thermal resistance, junction-case | Rth(j-c) | 2.3 | K/W | |
2410121550_Infineon-IKWH60N65WR6_C5359103.pdf
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