Silicon NPN Power Transistor ISC 2SC3866 Designed for High Frequency Inverters and Power Amplifiers
Key Attributes
Model Number:
2SC3866
Product Custom Attributes
Mfr. Part #:
2SC3866
Package:
TO-220F
Product Description
Product Overview
The 2SC3866 is a Silicon NPN Power Transistor from ISC, designed for high-voltage applications. It features a high breakdown voltage of 900V (V(BR)CBO), high switching speed, and high reliability with minimum lot-to-lot variations. This transistor is suitable for switching regulators, ultrasonic generators, high-frequency inverters, and general-purpose power amplifiers.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
- Type: NPN Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 800 | V | ||
| V(BR)CBO | Collector-Base Breakdown Voltage | IC= 1mA; IE= 0 | 900 | V | ||
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 1mA; IC= 0 | 10 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 1A; IB= 0.2A | 1.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 1A; IB= 0.2A | 1.5 | V | ||
| ICBO | Collector Cutoff Current | VCB= 900V; IE= 0 | 1.0 | mA | ||
| IEBO | Emitter Cutoff Current | VEB= 10V; IC= 0 | 1.0 | mA | ||
| hFE | DC Current Gain | IC= 1A ; VCE= 5V | 10 | |||
| ton | Turn-on Time | IC= 2A , IB1= 0.4A; IB2= -0.8A RL=150; PW=20s; Duty2% | 1.0 | s | ||
| tstg | Storage Time | 4.0 | s | |||
| tf | Fall Time | 0.8 | s | |||
| VCBO | Collector-Base Voltage | 900 | V | |||
| VCEO | Collector-Emitter Voltage | 800 | V | |||
| VEBO | Emitter-Base Voltage | 10 | V | |||
| IC | Collector Current-Continuous | 3 | A | |||
| IB | Base Current-Continuous | 1 | A | |||
| PC | Collector Power Dissipation @ TC=25 | 40 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | 150 | |||
| Rth j-c | Thermal Resistance,Junction to Case | 3.0 | /W |
2411220211_ISC-2SC3866_C5128643.pdf
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