Low forward voltage reverse conducting diode integrated in Infineon IHW30N65R5 IGBT for power control
Key Attributes
Model Number:
IHW30N65R5
Product Custom Attributes
Pd - Power Dissipation:
176W
Td(off):
220ns
Td(on):
29ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
15pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.3mA
Gate Charge(Qg):
153nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
95ns
Switching Energy(Eoff):
240uJ
Turn-On Energy (Eon):
850uJ
Input Capacitance(Cies):
3.69nF
Pulsed Current- Forward(Ifm):
42A
Output Capacitance(Coes):
34pF
Mfr. Part #:
IHW30N65R5
Package:
TO-247-3
Product Description
Product Description
The IHW30N65R5 is a Reverse conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic reverse-conducting diode with a low forward voltage. It utilizes TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat and Eoff, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM
- Certifications: JESD-022, RoHS compliant
- Lead Plating: Pb-free
- PSpice Models: Available at http://www.infineon.com/igbt/
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IHW30N65R5 | 650V | 60.0A | 1.35V | 175C | H30ER5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | 1.35 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 175C | 1.70 | - |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 25C | 1.70 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 175C | 2.10 | - |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.30mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - 40 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | - 35.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - 3690 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - 34 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - 15 | pF |
| Gate charge | QG | VCC = 520V, IC = 30.0A, VGE = 15V | - 153.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | - 13.0 | nH |
| Turn-on delay time | td(on) | Tvj = 25C | - 29 | ns |
| Rise time | tr | Tvj = 25C | - 17 | ns |
| Turn-off delay time | td(off) | Tvj = 25C | - 220 | ns |
| Fall time | tf | Tvj = 25C | - 8 | ns |
| Turn-on energy | Eon | Tvj = 25C | - 0.85 | mJ |
| Turn-off energy | Eoff | Tvj = 25C | - 0.24 | mJ |
| Total switching energy | Ets | Tvj = 25C | - 1.09 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C | - 95 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C | - 1.90 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C | - 28.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C | - -2000 | A/s |
| Turn-on delay time | td(on) | Tvj = 175C | - 28 | ns |
| Rise time | tr | Tvj = 175C | - 16 | ns |
| Turn-off delay time | td(off) | Tvj = 175C | - 240 | ns |
| Fall time | tf | Tvj = 175C | - 18 | ns |
| Turn-on energy | Eon | Tvj = 175C | - 0.95 | mJ |
| Turn-off energy | Eoff | Tvj = 175C | - 0.41 | mJ |
| Total switching energy | Ets | Tvj = 175C | - 1.36 | mJ |
| Diode reverse recovery time | trr | Tvj = 175C | - 114 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 175C | - 3.30 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 175C | - 45.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 175C | - -1650 | A/s |
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | Characteristic | 0.81 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | Characteristic | 3.81 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W |
2410121744_Infineon-IHW30N65R5_C536126.pdf
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