High Current Silicon NPN Power Transistor ISC 2SC3709A with Low Collector Saturation Voltage Feature

Key Attributes
Model Number: 2SC3709A
Product Custom Attributes
Mfr. Part #:
2SC3709A
Package:
TO-220F
Product Description

ISC Silicon NPN Power Transistor 2SC3709A

The ISC 2SC3709A is a Silicon NPN Power Transistor designed for high current switching applications. It features a low collector saturation voltage (VCE(sat)= 0.4V(Max)@IC= 6A) and good linearity of hFE. This transistor is a complement to the 2SA1451A type.

Product Attributes

  • Brand: ISC
  • Registered Trademark: ISC & ISCsemi
  • Material: Silicon
  • Type: NPN Power Transistor
  • Complementary Type: 2SA1451A

Technical Specifications

ParameterConditionsMinTypMaxUnit
Collector-Emitter Breakdown Voltage (V(BR)CEO)IC= 50mA ; IB= 050V
Collector-Emitter Saturation Voltage (VCE(sat))IC= 6A; IB= 0.3A0.4V
Base-Emitter Saturation Voltage (VBE(sat))IC= 6A; IB= 0.3A1.2V
Collector Cutoff Current (ICBO)VCB= 60V; IE= 010A
Emitter Cutoff Current (IEBO)VEB= 6V; IC= 010A
DC Current Gain (hFE-1)IC= 1A; VCE= 1V70240
DC Current Gain (hFE-2)IC= 6A; VCE= 1V40
Output Capacitance (COB)IE= 0; VCB= 10V; ftest= 1MHz180pF
Current-GainBandwidth Product (fT)IC= 1A; VCE= 5V90MHz
Turn-on Time (ton)IB1= -IB2= 0.3A, RL= 5; VCC30V0.2s
Storage Time (tstg)IB1= -IB2= 0.3A, RL= 5; VCC30V1.0s
Fall Time (tf)IB1= -IB2= 0.3A, RL= 5; VCC30V0.2s

Absolute Maximum Ratings

SymbolParameterValueUnit
VCBOCollector-Base Voltage60V
VCEOCollector-Emitter Voltage50V
VEBOEmitter-Base Voltage6V
ICCollector Current-Continuous12A
ICPPulse Collector Current30A
IBBase Current-Continuous2A
PCCollector Power Dissipation @ TC=2530W
TJJunction Temperature150
TstgStorage Temperature Range-55~150

2411220046_ISC-2SC3709A_C5128633.pdf

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