IGBT power module Infineon FZ600R12KS4 1200 volt 600 amp for industrial inverter applications
Key Attributes
Model Number:
FZ600R12KS4
Product Custom Attributes
Td(off):
530ns
Pd - Power Dissipation:
3.9kW
Td(on):
100ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@24mA
Operating Temperature:
-40℃~+125℃
Pulsed Current- Forward(Ifm):
1200A
Switching Energy(Eoff):
46mJ
Turn-On Energy (Eon):
22mJ
Mfr. Part #:
FZ600R12KS4
Product Description
Product Overview
The 62mm C-Series module features a fast IGBT2 for high-frequency switching applications. This IGBT module is designed for inverter use, offering high performance and reliability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: EN61140 (for basic insulation)
Technical Specifications
| Parameter | Value | Unit | Conditions |
| IGBT, Inverter - Maximum Rated Values | |||
| Collector-emitter voltage (VCES) | 1200 | V | Tvj = 25C |
| Continuous DC collector current (IC nom) | 600 | A | TC = 60C, Tvj max = 150C |
| Continuous DC collector current (IC) | 700 | A | TC = 25C, Tvj max = 150C |
| Repetitive peak collector current (ICRM) | 1200 | A | tP = 1 ms |
| Total power dissipation (Ptot) | 3900 | W | TC = 25C, Tvj max = 150C |
| Gate-emitter peak voltage (VGES) | +/-20 | V | |
| IGBT, Inverter - Characteristic Values | |||
| Collector-emitter saturation voltage (VCE sat) | 3.20 / 3.85 / 3.75 | V | IC = 600 A, VGE = 15 V (Tvj = 25C / Tvj = 125C) |
| Gate threshold voltage (VGEth) | 4.5 - 6.5 | V | IC = 24.0 mA, VCE = VGE, Tvj = 25C |
| Gate charge (QG) | 6.30 | C | VGE = -15 V ... +15 V |
| Internal gate resistor (RGint) | 0.5 | Tvj = 25C | |
| Input capacitance (Cies) | 39.0 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance (Cres) | 2.60 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current (ICES) | 5.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current (IGES) | 400 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time (td on) | 0.10 / 0.11 | s | IC = 600 A, VCE = 600 V, VGE = 15 V, RGon = 1.5 (Tvj = 25C / Tvj = 125C) |
| Rise time (tr) | 0.06 / 0.07 | s | IC = 600 A, VCE = 600 V, VGE = 15 V, RGon = 1.5 (Tvj = 25C / Tvj = 125C) |
| Turn-off delay time (td off) | 0.53 / 0.55 | s | IC = 600 A, VCE = 600 V, VGE = 15 V, RGoff = 1.5 (Tvj = 25C / Tvj = 125C) |
| Fall time (tf) | 0.03 / 0.04 | s | IC = 600 A, VCE = 600 V, VGE = 15 V, RGoff = 1.5 (Tvj = 25C / Tvj = 125C) |
| Turn-on energy loss per pulse (Eon) | 22.0 | mJ | IC = 600 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, RGon = 1.5 (Tvj = 25C / Tvj = 125C) |
| Turn-off energy loss per pulse (Eoff) | 46.0 | mJ | IC = 600 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, RGoff = 1.5 (Tvj = 25C / Tvj = 125C) |
| Short circuit data (ISC) | 3900 | A | VGE 15 V, VCC = 900 V, VCEmax = VCES - LsCE di/dt, Tvj = 125C, tP 10 s |
| Thermal resistance, junction to case (RthJC) | 0.032 | K/W | per IGBT |
| Thermal resistance, case to heatsink (RthCH) | 0.016 | K/W | per IGBT, Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Temperature under switching conditions (Tvj op) | -40 to 125 | C | |
| Diode, Inverter - Maximum Rated Values | |||
| Repetitive peak reverse voltage (VRRM) | 1200 | V | Tvj = 25C |
| Continuous DC forward current (IF) | 600 | A | |
| Repetitive peak forward current (IFRM) | 1200 | A | tP = 1 ms |
| It - value | 75000 | As | VR = 0 V, tP = 10 ms, Tvj = 125C |
| Diode, Inverter - Characteristic Values | |||
| Forward voltage (VF) | 2.00 / 1.70 / 2.55 | V | IF = 600 A, VGE = 0 V (Tvj = 25C / Tvj = 125C) |
| Peak reverse recovery current (IRM) | 420 / 620 | A | IF = 600 A, - diF/dt = 8000 A/s, VR = 600 V, VGE = -15 V (Tvj = 25C / Tvj = 125C) |
| Recovered charge (Qr) | 40.0 / 90.0 | C | IF = 600 A, - diF/dt = 8000 A/s, VR = 600 V, VGE = -15 V (Tvj = 25C / Tvj = 125C) |
| Reverse recovery energy (Erec) | 25.0 / 48.0 | mJ | IF = 600 A, - diF/dt = 8000 A/s, VR = 600 V, VGE = -15 V (Tvj = 25C / Tvj = 125C) |
| Thermal resistance, junction to case (RthJC) | 0.05 | K/W | per diode |
| Thermal resistance, case to heatsink (RthCH) | 0.028 | K/W | per diode, Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Temperature under switching conditions (Tvj op) | -40 to 125 | C | |
| Module - General Data | |||
| Isolation test voltage (VISOL) | 2.5 | kV | RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | ||
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | |
| Creepage distance (terminal to heatsink) | 20.0 | mm | |
| Creepage distance (terminal to terminal) | 20.0 | mm | |
| Clearance (terminal to heatsink) | 11.0 | mm | |
| Clearance (terminal to terminal) | 11.0 | mm | |
| Comparative tracking index (CTI) | > 425 | ||
| Thermal resistance, case to heatsink (RthCH) | 0.01 | K/W | per module, Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Stray inductance module (LsCE) | 16 | nH | |
| Module lead resistance, terminals - chip (RCC'+EE') | 0.50 | m | TC = 25C, per switch |
| Storage temperature (Tstg) | -40 to 125 | C | |
| Mounting torque for modul mounting (Screw M6) | 3.00 - 6.00 | Nm | Mounting according to valid application note |
| Terminal connection torque (Screw M4) | 1.1 | Nm | Mounting according to valid application note |
| Terminal connection torque (Screw M6) | 2.0 - 5.0 | Nm | Mounting according to valid application note |
| Weight (G) | 340 | g | |
2410121849_Infineon-FZ600R12KS4_C535645.pdf
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