Highspeed3 technology IGBT Infineon IKQ75N120CH3 designed for operation in industrial power systems
Key Attributes
Model Number:
IKQ75N120CH3
Product Custom Attributes
Td(off):
282ns
Pd - Power Dissipation:
938W
Td(on):
34ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
4.856nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@2.6mA
Gate Charge(Qg):
370nC@15V
Reverse Recovery Time(trr):
370ns
Switching Energy(Eoff):
2.8mJ
Turn-On Energy (Eon):
6.4mJ
Mfr. Part #:
IKQ75N120CH3
Package:
TO-247-3
Product Description
Product Description
The IKQ75N120CH3 is a high-speed switching IGBT from Infineon's third-generation series, featuring Highspeed3 technology for enhanced efficiency in hard switching and resonant topologies. It offers a 10sec short circuit withstand time at 175C, easy paralleling due to a positive temperature coefficient in VCEsat, low EMI, and low Gate Charge (QG). The device is copacked with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. It is qualified for industrial applications according to JEDEC standards.
Applications
- Industrial UPS
- Charger
- Energy Storage
- Three-level Solar String Inverter
- Welding
Product Attributes
- Brand: Infineon
- Technology: Highspeed3
- Certifications: RoHS compliant, Pb-free lead plating
- Product Validation: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Type | VCE | IC (Tc=25C) | IC (Tc=134C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package | Rth(j-c) IGBT | Rth(j-c) Diode | Rth(j-a) |
| IKQ75N120CH3 | 1200V | 150.0A | 75.0A | 2.00V | 175C | K75MCH3 | PG-TO247-3-46 | 0.16 K/W | 0.28 K/W | 40 K/W |
2410121813_Infineon-IKQ75N120CH3_C467848.pdf
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