Silicon NPN Darlington Power Transistor ISC 2SD1415A with 100V Breakdown Voltage and High Current Gain

Key Attributes
Model Number: 2SD1415A
Product Custom Attributes
Mfr. Part #:
2SD1415A
Package:
TO-220F
Product Description

Product Overview

The 2SD1415A is a Silicon NPN Darlington Power Transistor from ISC. It is designed for high power switching applications, including hammer driver and pulse motor driver applications. Key features include a high Collector-Emitter Breakdown Voltage of 100V(Min), a low Collector-Emitter Saturation Voltage of 1.5V(Max) @ IC= 3A, and a high DC Current Gain of 2000(Min) @ IC= 3A, VCE= 3V. This robust device offers minimum lot-to-lot variations for reliable operation.

Product Attributes

  • Brand: ISC
  • Trademark: ISC & ISCsemi
  • Material: Silicon
  • Type: NPN Darlington Power Transistor

Technical Specifications

ParameterSymbolConditionsMinTyp.MaxUnit
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 30mA ; IB= 0100V
Collector-Emitter Saturation VoltageVCE(sat)IC= 3A; IB= 6mA1.5V
Base-Emitter Saturation VoltageVBE(sat)IC= 3A; IB= 6mA2.0V
Collector Cutoff CurrentICBOVCB= 100V; IE= 0100A
Emitter Cutoff CurrentIEBOVEB= 6V; IC= 03.0mA
DC Current GainhFE -1IC= 3A ; VCE= 3V200015000
DC Current GainhFE -2IC= 6A ; VCE= 3V1000
Turn-on TimetonIB1= IB2= 6mA; RL= 15; VCC45V PW=20s; Duty Cycle1%0.3s
Storage Timetstg5.1s
Fall Timetf0.6s
ParameterSymbolValueUnit
Collector-Base VoltageVCBO120V
Collector-Emitter VoltageVCEO100V
Emitter-Base VoltageVEBO6V
Collector Current-ContinuousIC7A
Collector Current-PeakICM10A
Base Current-ContinuousIB0.7A
Collector Power Dissipation @ TC=25PC25W
Collector Power Dissipation @ Ta=25PC2.0W
Junction TemperatureTJ150
Storage Temperature RangeTstg-55~150

2412091104_ISC-2SD1415A_C491420.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.