Robust Infineon FF150R12KS4 IGBT module featuring fast switching and low losses for power conversion
Key Attributes
Model Number:
FF150R12KS4
Product Custom Attributes
Pd - Power Dissipation:
1.25kW
Td(off):
530ns
Td(on):
100ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@6mA
Operating Temperature:
-40℃~+125℃
Pulsed Current- Forward(Ifm):
300A
Switching Energy(Eoff):
11mJ
Turn-On Energy (Eon):
14.5mJ
Mfr. Part #:
FF150R12KS4
Package:
Screw Terminals
Product Description
Product Overview
The FF150R12KS4 is a 62mm C-Series IGBT module featuring a fast IGBT2 for high-frequency switching applications. It offers high short-circuit capability, low switching losses, and exceptional robustness with a positive temperature coefficient for VCEsat. Ideal for motor drives, medical applications, resonant inverters, servo drives, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Copper baseplate, Al2O3 internal isolation
- Color: Not specified
- Certifications: UL approved (E83335)
Technical Specifications
| Parameter | Value | Unit | Notes |
| Product Code | FF150R12KS4 | IGBT Module | |
| VCES | 1200 | V | Collector-emitter voltage |
| IC nom | 150 | A | Continuous DC collector current @ TC=75C |
| ICRM | 300 | A | Repetitive peak collector current (tP=1ms) |
| Ptot | 1250 | W | Total power dissipation @ TC=25C |
| VGES | +/-20 | V | Gate-emitter peak voltage |
| VCEsat | 3.20 - 3.85 | V | Collector-emitter saturation voltage @ IC=150A, VGE=15V |
| VGEth | 4.5 - 6.5 | V | Gate threshold voltage @ IC=6.00mA |
| QG | 1.60 | C | Gate charge @ VGE=-15V...+15V |
| RGint | 2.5 | Internal gate resistor @ Tvj=25C | |
| Cies | 11.0 | nF | Input capacitance @ f=1MHz |
| Cres | 0.50 | nF | Reverse transfer capacitance @ f=1MHz |
| ICES | 5.0 | mA | Collector-emitter cut-off current @ VCE=1200V, VGE=0V |
| IGES | 400 | nA | Gate-emitter leakage current @ VCE=0V, VGE=20V |
| td(on) | 0.10 - 0.11 | s | Turn-on delay time, inductive load |
| tr | 0.06 - 0.07 | s | Rise time, inductive load |
| td(off) | 0.53 - 0.55 | s | Turn-off delay time, inductive load |
| tf | 0.03 - 0.04 | s | Fall time, inductive load |
| Eon | 14.5 | mJ | Turn-on energy loss per pulse @ IC=150A, VCE=600V |
| Eoff | 11.0 | mJ | Turn-off energy loss per pulse @ IC=150A, VCE=600V |
| ISC | 950 | A | Short circuit current @ VGE15V, VCC=900V, Tvj=125C |
| RthJC (IGBT) | 0.10 | K/W | Thermal resistance, junction to case per IGBT |
| RthCH (IGBT) | 0.03 | K/W | Thermal resistance, case to heatsink per IGBT |
| Tvj op | -40 to 125 | C | Temperature under switching conditions |
| VRRM | 1200 | V | Repetitive peak reverse voltage (Diode) |
| IF | 150 | A | Continuous DC forward current (Diode) |
| IFRM | 300 | A | Repetitive peak forward current (Diode) |
| It | 4500 | As | Grenzlastintegral @ VR=0V, tP=10ms, Tvj=125C (Diode) |
| VF | 1.70 - 2.40 | V | Forward voltage @ IF=150A (Diode) |
| IRM | 105 - 160 | A | Peak reverse recovery current (Diode) |
| Qr | 8.70 - 24.0 | C | Recovered charge (Diode) |
| Erec | 3.20 - 8.40 | mJ | Reverse recovery energy per pulse (Diode) |
| RthJC (Diode) | 0.25 | K/W | Thermal resistance, junction to case per diode |
| RthCH (Diode) | 0.06 | K/W | Thermal resistance, case to heatsink per diode |
| VISOL | 2.5 | kV | Isolation test voltage RMS, f=50Hz, t=1min |
| CTI | > 400 | Comperative tracking index | |
| RthCH (Module) | 0.01 | K/W | Thermal resistance, case to heatsink per module |
| LsCE | 20 | nH | Stray inductance module |
| RCC'+EE' | 0.70 | m | Module lead resistance, terminals - chip per switch |
| Tstg | -40 to 125 | C | Storage temperature |
| Mounting Torque | 3.00 - 6.00 | Nm | For module mounting (Screw M6) |
| Terminal Torque | 2.5 - 5.0 | Nm | For electrical connections (Screw M6) |
| Weight | 340 | g |
2410121850_Infineon-FF150R12KS4_C540932.pdf
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