IGBT module Infineon IGW30N65L5 650V 30A low VCEsat transistor suitable for solar inverter systems
Key Attributes
Model Number:
IGW30N65L5
Product Custom Attributes
Td(off):
308ns
Pd - Power Dissipation:
227W
Td(on):
33ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
18pF
Input Capacitance(Cies):
4.9nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.2V@0.4mA
Operating Temperature:
-40℃~+175℃
Gate Charge(Qg):
168nC@15V
Output Capacitance(Coes):
42pF
Switching Energy(Eoff):
1.35mJ
Turn-On Energy (Eon):
470uJ
Mfr. Part #:
IGW30N65L5
Package:
TO-247-3
Product Description
Product Overview
The IGW30N65L5 is a 650V IGBT from Infineon's TRENCHSTOP 5 technology, offering a low VCE(sat) for improved efficiency. This fifth-generation IGBT provides a best-in-class tradeoff between conduction and switching losses, featuring a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for demanding applications such as uninterruptible power supplies, solar photovoltaic inverters, and welding machines.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP 5
- Series: Low VCE(sat) series fifth generation
- Certifications: JEDEC qualified, Pb-free lead plating, RoHS compliant
Technical Specifications
| Type | VCE | IC | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IGW30N65L5 | 650V | 30A | 1.05V | 175C | G30EL5 | PG-TO247-3 |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 650 | V |
| DC collector current, TC = 25C | IC | 85.0 | A |
| DC collector current, TC = 100C | IC | 62.0 | A |
| Pulsed collector current | ICpuls | 120.0 | A |
| Gate-emitter voltage | VGE | 20 | V |
| Transient Gate-emitter voltage | VGE | 30 | V |
| Power dissipation, TC = 25C | Ptot | 227.0 | W |
| Power dissipation, TC = 100C | Ptot | 114.0 | W |
| Operating junction temperature | Tvj | -40...+175 | C |
| Storage temperature | Tstg | -55...+150 | C |
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | C | |
| Mounting torque, M3 screw | M | 0.6 | Nm |
Thermal Resistance
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.66 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W |
Electrical Characteristics
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
| Static Characteristic | ||||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | - | 1.05 | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 100C | - | 1.05 | 1.35 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 150C | - | 1.04 | - | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.40mA, VCE = VGE | 4.2 | 5.0 | 5.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - | 400.0 | - | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 150C | - | 2000.0 | - | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 175C | - | 40.0 | - | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | - | 65.0 | - | S |
| Dynamic Characteristic | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 4900 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 42 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 18 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 30.0A, VGE = 15V | - | 168.0 | - | nC |
| Internal emitter inductance | LE | measured 5mm from case | - | 13.0 | - | nH |
| Switching Characteristic, Inductive Load (Tvj = 25C) | ||||||
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 33 | - | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 11 | - | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 308 | - | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 51 | - | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 0.47 | - | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 1.35 | - | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 1.82 | - | mJ |
| Switching Characteristic, Inductive Load (Tvj = 150C) | ||||||
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 31 | - | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 13 | - | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 370 | - | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 150 | - | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 0.68 | - | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 2.18 | - | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0 | - | 2.86 | - | mJ |
2410121744_Infineon-IGW30N65L5_C536097.pdf
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