TrenchStop Series IGBT Infineon IKW30N60T featuring EmCon HE diode and short circuit withstand time for power supplies
Key Attributes
Model Number:
IKW30N60T
Product Custom Attributes
Td(off):
254ns
Pd - Power Dissipation:
187W
Td(on):
23ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
50pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.43mA
Gate Charge(Qg):
167nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
143ns
Switching Energy(Eoff):
770uJ
Turn-On Energy (Eon):
690uJ
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
108pF
Mfr. Part #:
IKW30N60T
Package:
TO-247
Product Description
Product Overview
The IKW30N60T from Infineon's TrenchStop Series is a low-loss DuoPack IGBT featuring Trench and Fieldstop technology. It offers a very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for frequency converters and uninterruptible power supplies, its advanced technology provides tight parameter distribution, high ruggedness, temperature-stable behavior, very high switching speed, and low EMI. It also includes a very soft, fast recovery EmCon HE diode.
Product Attributes
- Brand: Infineon
- Series: TrenchStop
- Technology: Trench and Fieldstop
- Diode Type: EmCon HE
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package | Ordering Code |
| IKW30N60T | 600V | 30A | 1.5V | 175C | K30T60 | TO-247 | Q67040S4717 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | VC E | - | 600 | V |
| DC collector current, limited by Tjmax | I C | TC = 25C | 60 | A |
| DC collector current, limited by Tjmax | I C | TC = 100C | 30 | A |
| Pulsed collector current, tp limited by Tjmax | I C p u l s | - | 90 | A |
| Turn off safe operating area (VCE 600V, Tj 175C) | - | - | 90 | - |
| Diode forward current, limited by Tjmax | I F | TC = 25C | 60 | A |
| Diode forward current, limited by Tjmax | I F | TC = 100C | 30 | A |
| Diode pulsed current, tp limited by Tjmax | I Fp u l s | - | 90 | A |
| Gate-emitter voltage | V G E | - | 20 | V |
| Short circuit withstand time | t SC | VGE = 15V, VCC 400V, Tj 150C | 5 | s |
| Power dissipation | P to t | TC = 25C | 187 | W |
| Operating junction temperature | T j | - | -40...+175 | C |
| Storage temperature | T st g | - | -55...+175 | C |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | - | 260 | C |
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction case | R t h JC | TO-247 | 0.80 | K/W |
| Diode thermal resistance, junction case | R t h JC D | TO-247 | 1.05 | K/W |
| Thermal resistance, junction ambient | R t h JA | TO-247 AC | 40 | K/W |
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
| Collector-emitter breakdown voltage | V (BR )C ES | V G E=0V, I C=0.2mA | 600 | - | - | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=30A, T j=25C | - | 1.5 | - | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=30A, T j=175C | - | 1.9 | 2.05 | V |
| Diode forward voltage | V F | V G E=0V, I F=30A, T j=25C | - | 1.65 | - | V |
| Diode forward voltage | V F | V G E=0V, I F=30A, T j=175C | - | 1.6 | 2.05 | V |
| Gate-emitter threshold voltage | V G E( th ) | I C=0.43mA, VC E=VG E | 4.1 | 4.9 | 5.7 | V |
| Zero gate voltage collector current | I C ES | VC E=600V, V G E=0V, T j=25C | - | - | 40 | A |
| Zero gate voltage collector current | I C ES | VC E=600V, V G E=0V, T j=175C | - | - | 1000 | A |
| Gate-emitter leakage current | I G E S | VC E=0V,V GE=20V | - | - | 100 | nA |
| Transconductance | g f s | VC E=20V, I C=30A | - | 16.7 | - | S |
| Input capacitance | C i s s | - | - | 1630 | - | pF |
| Output capacitance | C o s s | - | - | 108 | - | pF |
| Reverse transfer capacitance | C r s s | VC E=25V, V G E=0V, f=1MHz | - | 50 | - | pF |
| Gate charge | Q Ga te | VC C=480V, I C=30A, V G E=15V | - | 167 | - | nC |
| Internal emitter inductance measured 5mm (0.197 in.) from case | L E | TO-247-3-1 | - | 7 | - | nH |
| Short circuit collector current | I C (SC ) | V G E=15V,t SC5s, VC C = 400V, T j = 150C | - | 275 | - | A |
| Parameter | Symbol | Conditions | min. | Typ. | max. | Unit |
| Turn-on delay time | t d (o n ) | Tj=25C | - | 23 | - | ns |
| Rise time | t r | Tj=25C | - | 21 | - | ns |
| Turn-off delay time | t d (o f f ) | Tj=25C | - | 254 | - | ns |
| Fall time | t f | Tj=25C | - | 46 | - | ns |
| Turn-on energy | Eo n | Tj=25C, VC C=400V,IC=30A, V G E=0/15V, R G=10.6 , L 1 )=136nH, C 1 )=39pF | - | 0.69 | - | mJ |
| Turn-off energy | Eo ff | Tj=25C, VC C=400V,IC=30A, V G E=0/15V, R G=10.6 , L 1 )=136nH, C 1 )=39pF | - | 0.77 | - | mJ |
| Total switching energy | E t s | Tj=25C, VC C=400V,IC=30A, V G E=0/15V, R G=10.6 , L 1 )=136nH, C 1 )=39pF | - | 1.46 | - | mJ |
| Diode reverse recovery time | t rr | Tj=25C | - | 143 | - | ns |
| Diode reverse recovery charge | Q r r | Tj=25C | - | 0.92 | - | C |
| Diode peak reverse recovery current | I rr m | Tj=25C | - | 16.3 | - | A |
| Diode peak rate of fall of reverse recovery current during t b | dir r/dt | T j=25C, VR=400V, I F=30A, diF/dt=910A/s | - | 603 | - | A/s |
| Turn-on delay time | t d (o n ) | Tj=175C | - | 24 | - | ns |
| Rise time | t r | Tj=175C | - | 26 | - | ns |
| Turn-off delay time | t d (o f f ) | Tj=175C | - | 292 | - | ns |
| Fall time | t f | Tj=175C | - | 90 | - | ns |
| Turn-on energy | Eo n | Tj=175C, VC C=400V,IC=30A, V G E=0/15V, R G= 10.6 , L 1 )=136nH, C 1 )=39pF | - | 1.0 | - | mJ |
| Turn-off energy | Eo ff | Tj=175C, VC C=400V,IC=30A, V G E=0/15V, R G= 10.6 , L 1 )=136nH, C 1 )=39pF | - | 1.1 | - | mJ |
| Total switching energy | E t s | Tj=175C, VC C=400V,IC=30A, V G E=0/15V, R G= 10.6 , L 1 )=136nH, C 1 )=39pF | - | 2.1 | - | mJ |
| Diode reverse recovery time | t rr | Tj=175C | - | 225 | - | ns |
| Diode reverse recovery charge | Q r r | Tj=175C | - | 2.39 | - | C |
| Diode peak reverse recovery current | I rr m | Tj=175C | - | 22.3 | - | A |
| Diode peak rate of fall of reverse recovery current during t b | dir r/dt | T j=175C, VR=400V, I F=30A, diF/dt=910A/s | - | 310 | - | A/s |
2410121543_Infineon-IKW30N60T_C10457.pdf
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