High speed switching JIAENSEMI JNG75T120LZS1 IGBT module designed for soft switching and energy systems
Key Attributes
Model Number:
JNG75T120LZS1
Product Custom Attributes
Td(off):
875ns
Pd - Power Dissipation:
694W
Td(on):
165ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
83pF
Input Capacitance(Cies):
9.101nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
225A
Output Capacitance(Coes):
318pF
Reverse Recovery Time(trr):
476ns
Switching Energy(Eoff):
900uJ
Turn-On Energy (Eon):
1.1mJ
Mfr. Part #:
JNG75T120LZS1
Package:
TO264
Product Description
JNG75T120LZS1 IGBT
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. Key features include 1200V, 75A rating, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
Product Attributes
- Brand: JIAEN
- Product Name: JNG75T120LZS1
- Package: TO-264
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VCES Collector-Emitter Voltage | 1200 | V | |||
| VGES Gate-Emitter Voltage | + 30 | V | |||
| IC Continuous Collector Current (TC=25 ) | 150 | A | |||
| IC Continuous Collector Current (TC=100) | 75 | A | |||
| ICM Pulsed Collector Current (Note 1) | 225 | A | |||
| IF Diode Continuous Forward Current (TC=100 ) | 75 | A | |||
| IFM Diode Maximum Forward Current (Note 1) | 225 | A | |||
| tsc Short Circuit Withstand Time | 10 | us | |||
| PD Maximum Power Dissipation (TC=25 ) | 694 | W | |||
| PD Maximum Power Dissipation (TC=100) | 278 | W | |||
| TJ Operating Junction Temperature Range | -55 | +150 | |||
| TSTG Storage Temperature Range | -55 | +150 | |||
| Thermal Characteristics | |||||
| Rth j-c Thermal Resistance, Junction to case for IGBT | 0.18 | / W | |||
| Rth j-c Thermal Resistance, Junction to case for Diode | 0.5 | / W | |||
| Rth j-a Thermal Resistance, Junction to Ambient | 25 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | |||||
| BVCES Collector-Emitter Breakdown Voltage | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES Collector-Emitter Leakage Current | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| IGES Gate Leakage Current, Forward | VGE= + 30V, VCE= 0V | - | - | + 100 | nA |
| VGE(th) Gate Threshold Voltage | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| VCE(sat) Collector-Emitter Saturation Voltage | VGE=15V, IC= 75A | - | 1.65 | 2.2 | V |
| Qg Total Gate Charge | VCC=960V VGE=15V IC=75A | - | 427 | - | nC |
| Qge Gate-Emitter Charge | - | 129 | - | nC | |
| Qgc Gate-Collector Charge | - | 170 | - | nC | |
| td(on) Turn-on Delay Time | VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25 | - | 165 | - | ns |
| tr Turn-on Rise Time | - | 115 | - | ns | |
| td(off) Turn-off Delay Time | - | 875 | - | ns | |
| tf Turn-off Fall Time | - | 163 | - | ns | |
| Eon Turn-on Switching Loss | - | 1.1 | - | mJ | |
| Eoff Turn-off Switching Loss | - | 0.9 | - | mJ | |
| Ets Total Switching Loss | - | 2.0 | - | mJ | |
| Cies Input Capacitance | VCE=25V VGE=0V f = 1MHz | - | 9101 | - | pF |
| Coes Output Capacitance | - | 318 | - | pF | |
| Cres Reverse Transfer Capacitance | - | 83 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | |||||
| VF Diode Forward Voltage | IF=75A | - | 2.1 | 3.2 | V |
| trr Diode Reverse Recovery Time | VCE = 600V IF= 75A dIF/dt = 700A/us | - | 476 | - | ns |
| IRR Diode peak Reverse Recovery Current | - | 25.6 | - | A | |
| QRR Diode Reverse Recovery Charge | - | 5808 | - | nC | |
2509021810_JIAENSEMI-JNG75T120LZS1_C51484276.pdf
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