1200V 40A IGBT transistor JIAENSEMI JNG40T120HJS1 for motor control and inverter power applications
Key Attributes
Model Number:
JNG40T120HJS1
Product Custom Attributes
Td(off):
266ns
Pd - Power Dissipation:
625W
Td(on):
42ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
29pF
Input Capacitance(Cies):
3.21nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
198pF
Reverse Recovery Time(trr):
175ns
Switching Energy(Eoff):
1.8mJ
Turn-On Energy (Eon):
4mJ
Mfr. Part #:
JNG40T120HJS1
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. This IGBT features 1200V, 40A rating, a typical VCE(sat) of 1.7V, high-speed switching, and soft current turn-off waveforms.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | + 20 | V | |||
| Continuous Collector Current (TC=25 ) | IC | 80 | A | |||
| Continuous Collector Current (TC=100) | IC | 40 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 120 | A | |||
| Diode Continuous Forward Current (TC=100 ) | IF | 40 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 120 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25 ) | PD | 625 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 312 | W | |||
| Operating Junction Temperature Range | TJ | -40 | +175 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.24 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 0.49 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | - | - | 250 | uA |
| Gate Leakage Current, Forward | IGES | VGE= + 20V, VCE= 0V | - | - | + 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC=1mA | 5.0 | 6.0 | 7.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A | - | 1.7 | - | V |
| Total Gate Charge | Qg | VCC=960V VGE=15V IC=40A | - | 191 | - | nC |
| Turn-on Delay Time | td(on) | VCC=600V VGE=15V IC=40A RG=10 Inductive Load TC=25 | - | 42 | - | ns |
| Turn-on Rise Time | tr | - | 101 | - | ns | |
| Turn-off Delay Time | td(off) | - | 266 | - | ns | |
| Turn-off Fall Time | tf | - | 70 | - | ns | |
| Turn-on Switching Loss | Eon | - | 4.0 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 1.8 | - | mJ | |
| Total Switching Loss | Ets | - | 5.8 | - | mJ | |
| Input Capacitance | Cies | VCE=30V VGE=0V f = 1MHz | - | 3210 | - | pF |
| Output Capacitance | Coes | - | 198 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 29 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=40A | - | 2.0 | - | V |
| Diode Reverse Recovery Time | trr | VCE = 600V IF= 40A dIF/dt = 750A/us | - | 175 | - | ns |
| Diode peak Reverse Recovery Current | Irr | - | 24 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 2000 | - | nC | |
2509021810_JIAENSEMI-JNG40T120HJS1_C51484272.pdf
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