5A 600V integrated power hybrid IC Infineon IRAM136-0760A2 designed for energy appliance motor drives
Key Attributes
Model Number:
IRAM136-0760A2
Product Custom Attributes
Mfr. Part #:
IRAM136-0760A2
Product Description
Product Description
The International Rectifier IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC designed for advanced appliance motor drive applications, including energy-efficient washing machines and refrigerator compressor drivers. This highly integrated device simplifies design by combining low VCE(on) Trench IGBT technology with a 3-phase high voltage, high-speed driver (3.3V compatible) in a single isolated, thermally enhanced package. Key features include a built-in high-precision temperature monitor, over-current protection, short-circuit rated IGBTs, and an integrated under-voltage lockout function, ensuring high levels of protection and fail-safe operation. Its Single In-line Package (SIP05) with a full transfer mold structure and CTI>600 minimizes PCB space and addresses isolation challenges for heatsinking.
Product Attributes
- Brand: International Rectifier
- Package Type: SIP05
- Isolation Voltage: 2000VRMS min
- Comparative Tracking Index (CTI): > 600
Technical Specifications
| Parameter | Value | Units | Conditions |
| IGBT/FW Diode Blocking Voltage (VCES / VRRM) | 600 | V | |
| Positive Bus Input Voltage (V+) | 450 | V | |
| RMS Phase Current (Io @ TC=25C) | 5 | A | (Note 1) |
| RMS Phase Current (Io @ TC=100C) | 3.5 | A | (Note 1) |
| Maximum Peak Phase Current (Ipk) | 5.5 | A | (Note 2) |
| Maximum PWM Carrier Frequency (Fp) | 20 | kHz | |
| Maximum Power Dissipation per IGBT (Pd @ TC =25C) | 18 | W | |
| Isolation Voltage (VISO) | 2000 | VRMS | (1min) |
| Maximum Operating Junction Temperature (TJ) | +150 | C | (IGBT & Diode & IC) |
| Operating Case Temperature Range (TC) | -20 to +100 | C | |
| Storage Temperature Range (TSTG) | -40 to +125 | C | |
| Mounting Torque Range (M3 screw) | 0.8 to 1.0 | Nm | |
| Peak Bootstrap Resistor Peak Power (PBR) | 15.0 | W | tP=100s, TC =100C |
| High side floating supply offset voltage (VS1,2,3) | -20 to +0.3 | V | VB1,2,3 |
| High side floating supply voltage (VB1,2,3) | -0.3 to 600 | V | |
| Low Side and logic fixed supply voltage (VCC) | -0.3 to 20 | V | |
| Input voltage (VIN) (LIN, HIN, ITrip) | -0.3 to Lower of (VSS+15V) or VCC+0.3V | V | |
| Collector-to-Emitter Breakdown Voltage (V(BR)CES) | 600 | V | VIN=0V, IC=250A |
| Temperature Coeff. Of Breakdown Voltage (V(BR)CES / T) | 0.3 | V/C | VIN=0V, IC=250A (25C - 150C) |
| Collector-to-Emitter Saturation Voltage (VCE(ON)) | 1.7 to 2.1 | V | IC=3.5A, TJ=25C, VCC=15V |
| Collector-to-Emitter Saturation Voltage (VCE(ON)) | 5 to 80 | V | IC=3.5A, TJ=150C |
| Diode Forward Voltage Drop (VFM) | 1.2 | V | IF=3.5A, TJ=25C |
| Diode Forward Voltage Drop (VFM) | 1.4 | V | IF=3.5A, TJ=150C |
| Bootstrap Resistor Value (RBR) | 22 | TJ=25C | |
| Turn-On Switching Loss (EON) | 210 to 340 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=25C |
| Turn-Off Switching Loss (EOFF) | 20 to 30 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=25C |
| Total Switching Loss (ETOT) | 245 to 370 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=25C |
| Diode Reverse Recovery energy (ERE) | 15 to 25 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=25C |
| Diode Reverse Recovery time (tRR) | 135 | ns | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=25C |
| Turn-On Switching Loss (EON) | 300 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=150C |
| Turn-Off Switching Loss (EOFF) | 50 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=150C |
| Total Switching Loss (ETOT) | 350 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=150C |
| Diode Reverse Recovery energy (ERE) | 30 | J | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=150C |
| Diode Reverse Recovery time (tRR) | 170 | ns | IC=3.5A, V+=400V, VCC=15V, L=1.2mH, TJ=150C |
| Turn-On IGBT Gate Charge (QG) | 9 to 13 | nC | IC=4A, V+=400V, VCC=15V |
| Short Circuit Collector Current (ICSC) | 30 | A | TJ=25C, V+=400V, VCC=15V |
| High side floating supply voltage (VB1,2,3) | VS+12 to VS+20 | V | |
| High side floating supply offset voltage (VS1,2,3) | 450 | V | Note 4 |
| Low side and logic fixed supply voltage (VCC) | 12 to 20 | V | |
| ITRIP input voltage (VITRIP) | VSS to VSS+5 | V | |
| Logic input voltage (VIN) (LIN, HIN, FLT/EN) | VSS to VSS+5 | V | |
| Positive going input threshold (VIN,th+) | 2.5 | V | |
| Negative going input threshold (VIN,th-) | 0.8 | V | |
| Undervoltage, Positive going threshold (VCCUV+, VBSUV+) | 10.6 to 11.6 | V | |
| Undervoltage, Negative going threshold (VCCUV-, VBSUV-) | 10.4 to 11.4 | V | |
| Undervoltage lock-out hysteresis (VCCUVH, VBSUVH) | 0.2 | V | |
| Quiescent VBS supply current (IQBS) | 120 | A | |
| Quiescent VCC supply current (IQCC) | 4 | mA | |
| Offset Supply Leakage Current (ILK) | 50 | A | |
| Input bias current (IIN+) | 100 to 195 | A | VIN=3.3V for LIN, HIN, FLT/EN |
| Input bias current (IIN-) | -1 | A | VIN=0V for LIN, HIN, FLT/EN |
| ITRIP bias current (ITRIP+) | 3.3 to 6 | A | VT/ITRIP=3.3V |
| ITRIP bias current (ITRIP-) | -1 | A | VT/ITRIP=0V |
| ITRIP threshold Voltage (V(ITRIP)) | 0.44 to 0.54 | V | |
| ITRIP Input Hysteresis (V(ITrip, HYS)) | 0.07 | V | |
| Fault low on resistance (Ron_FLT) | 50 to 100 | ||
| Input to Output propagation turn-on delay (TON) | 0.7 | s | |
| Input to Output propagation turn-off delay (TOFF) | 0.7 | s | |
| Input filter time (TFILIN) | 100 to 200 | ns | HIN,LIN,FLT/EN |
| EN to output propagation delay (TEN) | 300 to 600 | ns | VIN=0 or VIN=5V, VEN=0 |
| ITRIP to Fault propagation delay (TFLT) | 400 to 800 | ns | VIN=0 or VIN=5V, VITRIP=5V |
| ITRIP Blanking Time (TBLT-ITRIP) | 100 to 150 | ns | VIN=0 or VIN=5V, VITRIP=5V |
| ITRIP to six switch turn-off propagation delay (TITRIP) | 1.75 | s | IC=3.5A, V+=300V |
| Dead Time (DT) | 220 to 360 | ns | VIN=0 or VIN=5V |
| Matching Propagation Delay Time (MT) | 40 to 75 | ns | all channels |
| FAULT clear time (TFLT-CLR) | 1.7 | ms | TC = 25C IC=3.5A, V+=300V |
| Thermal resistance, per IGBT (Rth(J-C)) | 6.4 to 7.0 | C/W | |
| Thermal resistance, per Diode (Rth(J-C)) | 9.0 to 9.9 | C/W | |
| Thermal resistance, C-S (Rth(C-S)) | 0.1 | C/W | |
| Creepage Distance (CD) | 3.2 | mm | from pins to backside of module |
| Comparative Tracking Index (CTI) | 600 | V | |
| NTC Thermistor Resistance @ 25C (R25) | 97 to 103 | k | |
| NTC Thermistor Resistance @ 125C (R125) | 2.25 to 2.80 | k | |
| NTC Thermistor B-constant (25-50C) | 4165 to 4335 | k |
2411272328_Infineon-IRAM136-0760A2_C19316078.pdf
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