EconoDUAL3 Infineon IFF750B12ME7B11BPSA1 module with integrated NTC thermistor and current sense shunt
Key Attributes
Model Number:
IFF750B12ME7B11BPSA1
Product Custom Attributes
Mfr. Part #:
IFF750B12ME7B11BPSA1
Product Description
Product Overview
The EconoDUAL3 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode, featuring PressFIT technology, an integrated temperature sensor, NTC, and current sense shunt, offers high power density for demanding applications. It is qualified for industrial applications according to relevant IEC standards.
Product Attributes
- Brand: Infineon
- Product Line: EconoDUAL3
- Technology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, PressFIT
- Integrated Components: Temperature sensor, NTC-Thermistor, Current sense shunt
- Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068
Technical Specifications
| Component | Parameter | Symbol | Note or test condition | Values | Unit |
| IGBT, Inverter | Collector-emitter voltage | VCES | 1200 | V | |
| Continuous DC collector current | ICDC | Tvj max = 175 C, TC = 95 C | 750 | A | |
| Maximum RMS module DC- terminal current | ItRMS | TTerminal = 90 C, TC = 90 C | 562 | A | |
| Repetitive peak collector current | ICRM | tp limited by Tvj op | 1500 | A | |
| Gate-emitter peak voltage | VGES | 20 | V | ||
| Collector-emitter saturation voltage | VCE sat | IC = 750 A, VGE = 15 V | 1.50 - 1.75 | V | |
| Gate threshold voltage | VGEth | IC = 15.3 mA, VCE = VGE, Tvj = 25 C | 5.15 - 6.45 | V | |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 115 | nF | |
| Turn-on delay time (inductive load) | tdon | IC = 750 A, VCC = 600 V, VGE = 15 V, RGon = 0.51 | 0.293 - 0.341 | s | |
| Turn-off delay time (inductive load) | tdoff | IC = 750 A, VCC = 600 V, VGE = 15 V, RGoff = 0.51 | 0.450 - 0.587 | s | |
| Turn-on energy loss per pulse | Eon | IC = 750 A, VCC = 600 V, L = 25 nH, VGE = 15 V, RGon = 0.51 | 36.7 - 70.5 | mJ | |
| Turn-off energy loss per pulse | Eoff | IC = 750 A, VCC = 600 V, L = 25 nH, VGE = 15 V, RGoff = 0.51 | 63.6 - 123 | mJ | |
| Thermal resistance, junction to case | RthJC | per IGBT | 0.0520 | K/W | |
| Diode, Inverter | Repetitive peak reverse voltage | VRRM | 1200 | V | |
| Continuous DC forward current | IF | 750 | A | ||
| Repetitive peak forward current | IFRM | tP = 1 ms | 1500 | A | |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 35000 - 46800 | As | |
| Forward voltage | VF | IF = 750 A, VGE = 0 V | 1.60 - 2.10 | V | |
| Peak reverse recovery current | IRM | VCC = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 6800 A/s | 392 - 555 | A | |
| Recovered charge | Qr | VCC = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 6800 A/s | 44.5 - 124 | C | |
| Reverse recovery energy | Erec | VCC = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 6800 A/s | 18.2 - 48.9 | mJ | |
| NTC-Thermistor | Rated resistance | R25 | TNTC = 25 C | 5 | k |
| Deviation of R100 | R/R | TNTC = 100 C, R100 = 493 | -5 - 5 | % | |
| Power dissipation | P25 | TNTC = 25 C | 20 | mW | |
| Package | Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 3.4 | kV |
| Material of module baseplate | Al2O3 | ||||
| Creepage distance terminal to baseplate | dCreep nom | (PD2, IEC 60664-1, Ed. 3.0) | > 15 | mm | |
| Creepage distance terminal to terminal | dCreep nom | (PD2, IEC 60664-1, Ed. 3.0) | 12.1 | mm | |
| Clearance terminal to baseplate | dClear nom | > 12.5 | mm | ||
| Clearance terminal to terminal | dClear nom | 10.0 | mm | ||
| Weight | G | 345 | g |
2411011504_Infineon-IFF750B12ME7B11BPSA1_C7207027.pdf
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