Power Device JIAENSEMI JNG50T65HJU1 Trench IGBT with 650V Voltage and 535W Maximum Power Dissipation
Key Attributes
Model Number:
JNG50T65HJU1
Product Custom Attributes
Td(off):
193ns
Pd - Power Dissipation:
535W
Td(on):
52ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
37pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
158nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
82ns
Switching Energy(Eoff):
1mJ
Turn-On Energy (Eon):
1.7mJ
Input Capacitance(Cies):
4.82nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
170pF
Mfr. Part #:
JNG50T65HJU1
Package:
TO-247
Product Description
Product Overview
The JIAEN JNG50T65HJU1 is a Trench IGBT designed for applications requiring high efficiency and lower losses. It offers soft current turn-off waveforms and a square RBSOA, making it suitable for soft switching applications.
Product Attributes
- Brand: JIAEN Semiconductor Co., Ltd
- Origin: www.jiaensemi.com
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VCES | Collector-Emitter Voltage | 650 | V | |||
| VGES | Gate-Emitter Voltage | +20 | V | |||
| IC | Continuous Collector Current | ( TC=25 ) | 100 | A | ||
| ( TC=100) | 50 | A | ||||
| ICM | Pulsed Collector Current (Note 1) | 200 | A | |||
| IF | Diode Continuous Forward Current | ( TC=100 ) | 50 | A | ||
| IFM | Diode Maximum Forward Current (Note 1) | 200 | A | |||
| PD | Maximum Power Dissipation | ( TC=25 ) | 535 | W | ||
| ( TC=100) | 267 | W | ||||
| TJ | Operating Junction Temperature Range | -40 | +175 | |||
| TSTG | Storage Temperature Range | -55 | +150 | |||
| Rth j-c | Thermal Resistance, Junction to case for IGBT | 0.28 | / W | |||
| Rth j-c | Thermal Resistance, Junction to case for Diode | 0.42 | / W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 40 | / W | |||
| BVCES | Collector-Emitter Breakdown Voltage | VGE= 0V, IC= 250uA | 650 | - | - | V |
| ICES | Collector-Emitter Leakage Current | VCE= 650V, VGE= 0V | - | 50 | uA | |
| IGES | Gate Leakage Current, Forward | VGE=20V, VCE= 0V | - | 100 | nA | |
| VGE(th) | Gate Threshold Voltage | VGE= VCE, IC= 1mA | 4.5 | - | 6.0 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC= 50A | 1.8 | - | V | |
| Qg | Total Gate Charge | VCC=520V VGE=15V IC=50A | 158 | - | nC | |
| t d(on) | Turn-on Delay Time | VCC=400V VGE=15V IC=50A RG=10 Inductive Load TC=25 | 52 | - | ns | |
| t r | Turn-on Rise Time | 82 | - | ns | ||
| t d(off) | Turn-off Delay Time | 193 | - | ns | ||
| t f | Turn-off Fall Time | 61 | - | ns | ||
| Eon | Turn-on Switching Loss | 1.7 | - | mJ | ||
| Eoff | Turn-off Switching Loss | 1.0 | - | mJ | ||
| Ets | Total Switching Loss | 2.7 | - | mJ | ||
| Cies | Input Capacitance | VCE=30V VGE=0V f = 1MHz | 4820 | - | pF | |
| Coes | Output Capacitance | 170 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 37 | - | pF | ||
| VF | Diode Forward Voltage | IF=50A | 1.8 | - | V | |
| t r r | Diode Reverse Recovery Time | VCE = 400V IF= 50A dif/dt= 800A/ns | 82 | - | ns | |
| I r r | Diode peak Reverse Recovery Current | 15 | - | A | ||
| Qr r | Diode Reverse Recovery Charge | 698 | - | nC |
2509121150_JIAENSEMI-JNG50T65HJU1_C51484258.pdf
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