600V 3 Phase Inverter Intelligent Power Module Infineon IM241S6T2JAKMA1 for Appliance Motor Drives
Key Attributes
Model Number:
IM241S6T2JAKMA1
Product Custom Attributes
Voltage - Isolation:
2000Vrms
Mfr. Part #:
IM241S6T2JAKMA1
Package:
DIP-23
Product Description
Product Overview
The IM241 Series CIPOS Micro Intelligent Power Module (IPM) is a 600V, 3-phase inverter designed for high-efficiency appliance motor drives. It offers both fast and slow speed options for low loss and low EMI operation, respectively. Key features include integrated gate drivers with bootstrap function, Reverse Conducting IGBT Gen 2, temperature monitoring, accurate overcurrent shutdown, fault reporting, advanced input filtering with shoot-through protection, optimized dV/dt, open-emitter for current sensing, and 3.3V logic compatibility. It is qualified for industrial applications.
Product Attributes
- Brand: Infineon
- Product Line: CIPOS Micro
- Series: IM241 Series
- Certifications: Qualified for industrial applications according to JEDEC47/20/22.
Technical Specifications
| Base Part Number | Package Type | Standard Pack Form | Quantity | Description |
| IM241-S6T2y | DIP 29x12 | Tube | 240 | 3-phase Intelligent Power Module (IPM) 600 V, 2 A |
| IM241-S6S1y | SOP 29x12 | Tube | 240 | 3-phase Intelligent Power Module (IPM) 600 V, 2 A |
| IM241-S6S1y | SOP 29x12 | Tape & Reel | 500 | 3-phase Intelligent Power Module (IPM) 600 V, 2 A |
2411220458_Infineon-IM241S6T2JAKMA1_C6968696.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
