Power transistor JIAENSEMI JNG30T65FJS1 650V 30A insulated gate bipolar transistor for motor control
Key Attributes
Model Number:
JNG30T65FJS1
Product Custom Attributes
Pd - Power Dissipation:
50W
Td(off):
151ns
Td(on):
30ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
23pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@1mA
Operating Temperature:
-40℃~+175℃
Gate Charge(Qg):
103nC@15V
Reverse Recovery Time(trr):
105ns
Switching Energy(Eoff):
600uJ
Turn-On Energy (Eon):
950uJ
Input Capacitance(Cies):
1.978nF
Pulsed Current- Forward(Ifm):
80A
Output Capacitance(Coes):
100pF
Mfr. Part #:
JNG30T65FJS1
Package:
TO-247
Product Description
JNG30T65FJS1 IGBT
The JNG30T65FJS1 is a 650V, 30A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key features include a typical VCE(sat) of 1.7V at VGE=15V and IC=30A, making it suitable for demanding home appliance and motor drive systems.
Product Attributes
- Brand: JIAEN Semiconductor Co., Ltd
- Model: JNG30T65FJS1
Technical Specifications
| Parameter | Value | Units | Conditions |
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage (VCES) | 650 | V | |
| Gate-Emitter Voltage (VGES) | +20 | V | |
| Continuous Collector Current (IC) | 60 | A | (TC=25 ) |
| Continuous Collector Current (IC) | 30 | A | (TC=100) |
| Pulsed Collector Current (ICM) | 120 | A | (Note 1) |
| Diode Continuous Forward Current (IF) | 30 | A | (TC=100 ) |
| Diode Maximum Forward Current (IFM) | 80 | A | (Note 1) |
| Short Circuit Withstand Time (tsc) | 10 | s | |
| Maximum Power Dissipation (PD) | 50 | W | (TC=25 ) |
| Maximum Power Dissipation (PD) | 25 | W | (TC=100) |
| Operating Junction Temperature Range (TJ) | -40 to +175 | ||
| Storage Temperature Range (TSTG) | -55 to +150 | ||
| Thermal Characteristics | |||
| Thermal Resistance, Junction to case (Rth j-c) for IGBT | 3.0 | / W | |
| Thermal Resistance, Junction to case (Rth j-c) for Diode | 4.5 | / W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 50 | / W | |
| Electrical Characteristics (TC=25 unless otherwise noted) | |||
| Collector-Emitter Breakdown Voltage (BVCES) | 650 | V | VGE= 0V, IC= 250uA |
| Collector-Emitter Leakage Current (ICES) | 50 | uA | VCE= 650V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | 100 | nA | VGE=20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.2 - 6.0 | V | VGE= VCE, IC=1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.7 | V | VGE=15V, IC= 30A |
| Total Gate Charge (Qg) | 103 | nC | VCC=520V, VGE=15V, IC=30A |
| Turn-on Delay Time (td(on)) | 30 | ns | VCC=400V, VGE=15V, IC=30A, RG=10, Inductive Load, TC=25 |
| Turn-on Rise Time (tr) | 39 | ns | |
| Turn-off Delay Time (td(off)) | 151 | ns | |
| Turn-off Fall Time (tf) | 29 | ns | |
| Turn-on Switching Loss (Eon) | 0.95 | mJ | |
| Turn-off Switching Loss (Eoff) | 0.60 | mJ | |
| Total Switching Loss (Ets) | 1.55 | mJ | |
| Input Capacitance (Cies) | 1978 | pF | VCE=30V, VGE=0V, f = 1MHz |
| Output Capacitance (Coes) | 100 | pF | |
| Reverse Transfer Capacitance (Cres) | 23 | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | |||
| Diode Forward Voltage (VF) | 1.4 | V | IF=30A |
| Diode Reverse Recovery Time (trr) | 105 | ns | VCE = 400V, IF = 30A, dif/dt = 550A/us |
| Diode peak Reverse Recovery Current (IRR) | 16 | A | |
| Diode Reverse Recovery Charge (Qrr) | 876 | nC | |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2509021810_JIAENSEMI-JNG30T65FJS1_C51484254.pdf
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