650V 20A IGBT module JIAENSEMI JNG20T65HS1 TO247 package for motor control and inverter applications
Key Attributes
Model Number:
JNG20T65HS1
Product Custom Attributes
Pd - Power Dissipation:
156W
Td(off):
71ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7.5pF
Input Capacitance(Cies):
831pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@0.25mA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
50pF
Reverse Recovery Time(trr):
110ns
Switching Energy(Eoff):
410uJ
Turn-On Energy (Eon):
460uJ
Mfr. Part #:
JNG20T65HS1
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. The JNG20T65HS1 features 650V, 20A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=20A, providing high-speed switching and higher system efficiency with soft current turn-off waveforms and square RBSOA.
Product Attributes
- Brand: JIAEN
- Product Series: JNG20T65HS1
- Package Type: TO-247
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VCES | Collector-Emitter Voltage | 650 | V | |||
| VGES | Gate-Emitter Voltage | +30 | V | |||
| IC | Continuous Collector Current | ( TC=25 ) | 40 | A | ||
| ( TC=100) | 20 | A | ||||
| ICM | Pulsed Collector Current (Note 1) | 60 | A | |||
| IF | Diode Continuous Forward Current | ( TC=100 ) | 20 | A | ||
| IFM | Diode Maximum Forward Current (Note 1) | 60 | A | |||
| tsc | Short Circuit Withstand Time | 10 | us | |||
| PD | Maximum Power Dissipation | ( TC=25 ) | 156 | W | ||
| ( TC=100) | 63 | W | ||||
| TJ | Operating Junction Temperature Range | -55 | +150 | |||
| TSTG | Storage Temperature Range | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Rth j-c | Thermal Resistance, Junction to case for IGBT | 0.8 | / W | |||
| Rth j-c | Thermal Resistance, Junction to case for Diode | 1.6 | / W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted ) | ||||||
| BVCES | Collector-Emitter Breakdown Voltage | VGE= 0V, IC= 250uA | 650 | - | - | V |
| ICES | Collector-Emitter Leakage Current | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| IGES | Gate Leakage Current, Forward | VGE=20V, VCE= 0V | - | - | 100 | nA |
| VGE(th) | Gate Threshold Voltage | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC= 20A | - | 2.0 | 2.5 | V |
| Qg | Total Gate Charge | VCC=480V VGE=15V IC=20A | - | 271 | - | nC |
| Qge | Gate-Emitter Charge | - | 70 | - | nC | |
| Qgc | Gate-Collector Charge | - | 131 | - | nC | |
| td(on) | Turn-on Delay Time | VCC=400V VGE=15V IC=20A RG=15 Inductive Load TC=25 | - | 17 | - | ns |
| tr | Turn-on Rise Time | - | 31 | - | ns | |
| td(off) | Turn-off Delay Time | - | 71 | - | ns | |
| tf | Turn-off Fall Time | - | 99 | - | ns | |
| Eon | Turn-on Switching Loss | - | 0.46 | - | mJ | |
| Eoff | Turn-off Switching Loss | - | 0.41 | - | mJ | |
| Ets | Total Switching Loss | - | 0.87 | - | mJ | |
| Cies | Input Capacitance | VCE=25V VGE=0V f = 1MHz | - | 831 | - | pF |
| Coes | Output Capacitance | - | 50 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 7.5 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted ) | ||||||
| VF | Diode Forward Voltage | IF=20A | - | 1.5 | 3.0 | V |
| trr | Diode Reverse Recovery Time | VCE = 400V IF= 20A Rg=15 | - | 110 | - | ns |
| IRR | Diode peak Reverse Recovery Current | - | 16.6 | - | A | |
| QRR | Diode Reverse Recovery Charge | - | 736 | - | nC | |
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2509021810_JIAENSEMI-JNG20T65HS1_C51484248.pdf
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