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quality Compact and robust Infineon TDB6HK180N16RR IGBT module featuring copper base plate for power conversion factory
quality Compact and robust Infineon TDB6HK180N16RR IGBT module featuring copper base plate for power conversion factory
quality Compact and robust Infineon TDB6HK180N16RR IGBT module featuring copper base plate for power conversion factory
quality Compact and robust Infineon TDB6HK180N16RR IGBT module featuring copper base plate for power conversion factory

Compact and robust Infineon TDB6HK180N16RR IGBT module featuring copper base plate for power conversion

Key Attributes
Model Number: TDB6HK180N16RR
Product Custom Attributes
Holding Current (Ih):
220mA
Current - Gate Trigger(Igt):
100mA
Voltage - On State(Vtm):
-
Current - On State(It(RMS)):
-
Peak Off - State Voltage(Vdrm):
1.6kV
Current - Surge(Itsm@f):
1.6kA@50Hz
SCR Type:
3 SCR And 3 Diode
Operating Temperature:
-
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
TDB6HK180N16RR
Package:
Through Hole,107.5x45mm
Product Description

Product Overview

The TDB6HK180N16RR is an IGBT module designed for applications such as active rectifiers and half-controlled B6-bridges. It features high power density, mechanical robustness, and a compact design with an isolated base plate and copper base plate. The module utilizes Al2O3 substrate with low thermal resistance and solder contact technology, ensuring reliable performance and durability. It is RoHS compliant and UL approved (E83335).

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Al2O3 Substrate, Copper Base Plate
  • Color: Not specified
  • Certifications: UL approved (E83335), RoHS compliant

Technical Specifications

ComponentParameterValueUnitConditions
Diode, RectifierVRRM1600VTvj = 25C
IFRMSM150ATC = 80C
IRMSM180ATC = 80C
IFSM1600 / 1400Atp = 10 ms, Tvj = 25C / 150C
It13000 / 9500Astp = 10 ms, Tvj = 25C / 150C
VF1.20VTvj = 150C, IF = 150 A
RthJC0.35K/Wper diode
Thyristor-RectifierVRRM1600VTvj = 25C
IFRMSM150ATC = 80C
IRMSmax180ATC = 80C
IFSM1550 / 1300AtP = 10ms, Tvj = 25C / 130C
It12000 / 8450AstP = 10ms, Tvj = 25C / 130C
(di/dt)cr100A/sf = 50Hz, iGM = 0.6A, diG/dt = 0.6A/s
VF1.30VTvj = 130C, IF = 150 A
IGT100mATvj = 25C, vD = 6 V
VGT2.0VTvj = 25C, vD = 6 V
RthJC0.30K/Wper Thyristor
IGBT, Brake-ChopperVCES1200VTvj = 25C
IC nom100ATC = 80C, Tvj = 175C
ICRM200AtP = 1 ms
Ptot515WTC = 25C, Tvj = 175C
VGES+/-20V
VCE sat1.75 / 2.05 / 2.10 / 2.20VIC = 100 A, VGE = 15V, Tvj = 25C / 125C / 150C
VGEth5.0 / 5.8 / 6.5VIC = 3.55 mA, VCE = VGE, Tvj = 25C
QG0.80CVGE = -15 V ... +15 V
Cies6.30nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Cres0.27nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
td on0.16 / 0.17sIC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C / 125C / 150C
tr0.03 / 0.04sIC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C / 125C / 150C
td off0.33 / 0.43 / 0.45sIC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C / 125C / 150C
tf0.08 / 0.145 / 0.17sIC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C / 125C / 150C
Eon5.50 / 8.50 / 9.50mJIC = 100 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, RGon = 1.6 , Tvj = 25C / 125C / 150C
Eoff5.50 / 8.50 / 9.50mJIC = 100 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, RGoff = 1.6 , Tvj = 25C / 125C / 150C
Diode, Brake-ChopperVRRM1200VTvj = 25C
IF50A
IFRM100AtP = 1 ms
It510AsVR = 0 V, tP = 10 ms, Tvj = 125C
VF1.70 / 1.65 / 1.65 / 2.15VIF = 50 A, VGE = 0 V, Tvj = 25C / 125C / 150C
IRM54.0 / 60.0 / 63.0AIF = 50 A, - diF/dt = 3000 A/s, VR = 600 V, Tvj = 25C / 125C / 150C
Qr5.50 / 8.80 / 10.0CIF = 50 A, - diF/dt = 3000 A/s, VR = 600 V, Tvj = 25C / 125C / 150C

2410311228_Infineon-TDB6HK180N16RR_C3613923.pdf

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