Power semiconductor JIAENSEMI JNG15N120HS2 NPT IGBT 1200V 15A suitable for soft switching and energy systems
Key Attributes
Model Number:
JNG15N120HS2
Product Custom Attributes
Td(off):
135ns
Pd - Power Dissipation:
180W
Td(on):
30ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
110pF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Operating Temperature:
-55℃~+150℃
Reverse Recovery Time(trr):
240ns
Switching Energy(Eoff):
900uJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
550pF
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
180pF
Mfr. Part #:
JNG15N120HS2
Package:
TO-247
Product Description
Product Overview
JIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. This device features 1200V, 15A rating with a typical VCE(sat) of 2.2V. It provides high-speed switching, higher system efficiency, and soft current turn-off waveforms with square RBSOA using NPT technology.
Product Attributes
- Brand: JIAEN
- Technology: NPT IGBT
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | + 20 | V | |||
| Continuous Collector Current (TC=25) | IC | 30 | A | |||
| Continuous Collector Current (TC=100) | IC | 15 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 45 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 15 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 45 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 180 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 70 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.68 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 0.98 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | V | ||
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | 250 | uA | ||
| Gate Leakage Current, Forward | IGES | VGE=30V, VCE= 0V | 100 | nA | ||
| Gate Leakage Current, Reverse | IGES | VGE= -30V, VCE= 0V | -100 | nA | ||
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4 | 6 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 15A | 2.2 | 2.7 | V | |
| Total Gate Charge | Qg | VCC=960V VGE=15V IC=15A | 70 | nC | ||
| Gate-Emitter Charge | Qge | 23 | nC | |||
| Gate-Collector Charge | Qgc | 24 | nC | |||
| Turn-on Delay Time | td(on) | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | 30 | ns | ||
| Turn-on Rise Time | tr | 35 | ns | |||
| Turn-off Delay Time | td(off) | 260 | ns | |||
| Turn-off Fall Time | tf | 135 | ns | |||
| Turn-on Switching Loss | Eon | 1.3 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.9 | mJ | |||
| Total Switching Loss | Ets | 2.2 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 100kHz | 550 | pF | ||
| Output Capacitance | Coes | 180 | pF | |||
| Reverse Transfer Capacitance | Cres | 110 | pF | |||
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=15A | 2.3 | 2.8 | V | |
| Diode Reverse Recovery Time | trr | VCE = 600V IF= 15A dIF/dt = 400A/us | 240 | ns | ||
| Diode peak Reverse Recovery Current | Irr | 13 | A | |||
| Diode Reverse Recovery Charge | Qrr | 2000 | nC | |||
2509021810_JIAENSEMI-JNG15N120HS2_C51484263.pdf
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