Power semiconductor device JIAENSEMI JNG20T65KS trench IGBT with 650 volt collector emitter voltage
Key Attributes
Model Number:
JNG20T65KS
Product Custom Attributes
Td(off):
71ns
Pd - Power Dissipation:
139W
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7.5pF
Input Capacitance(Cies):
831pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
50pF
Reverse Recovery Time(trr):
110ns
Switching Energy(Eoff):
410uJ
Turn-On Energy (Eon):
460uJ
Mfr. Part #:
JNG20T65KS
Package:
TO-263
Product Description
Product Overview
The JNG20T65KS is a JIAEN Trench IGBT offering lower losses and higher energy efficiency. It is designed for applications such as motor control, general inverters, and other soft switching applications, featuring high-speed switching and soft current turn-off waveforms.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
Technical Specifications
| Parameter | Value | Units | Conditions |
| Collector-Emitter Voltage (VCES) | 650 | V | |
| Gate-Emitter Voltage (VGES) | +30 | V | |
| Continuous Collector Current (IC) (TC=25) | 40 | A | |
| Continuous Collector Current (IC) (TC=100) | 20 | A | |
| Pulsed Collector Current (ICM) | 60 | A | Note 1 |
| Diode Continuous Forward Current (IF) (TC=100) | 20 | A | |
| Diode Maximum Forward Current (IFM) | 60 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 10 | us | |
| Maximum Power Dissipation (PD) (TC=25) | 139 | W | |
| Maximum Power Dissipation (PD) (TC=100) | 56 | W | |
| Operating Junction Temperature Range (TJ) | -55 to +150 | ||
| Storage Temperature Range (TSTG) | -55 to +150 | ||
| Thermal Resistance, Junction to Case (Rth j-c) for IGBT | 0.9 | /W | |
| Thermal Resistance, Junction to Case (Rth j-c) for Diode | 1.6 | /W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 62.5 | /W | |
| Collector-Emitter Breakdown Voltage (BVCES) | 650 | V | VGE= 0V, IC= 250uA |
| Collector-Emitter Leakage Current (ICES) | 100 | uA | VCE= 650V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | 100 | nA | VGE=20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.1 - 6.9 | V | VGE= VCE, IC= 250uA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.0 - 2.5 | V | VGE=15V, IC= 20A |
| Total Gate Charge (Qg) | 271 | nC | VCC=480V VGE=15V IC=20A |
| Gate-Emitter Charge (Qge) | 70 | nC | |
| Gate-Collector Charge (Qgc) | 131 | nC | |
| Turn-on Delay Time (td(on)) | 17 | ns | VCC=400V VGE=15V IC=20A RG=15 TC=25 |
| Turn-on Rise Time (tr) | 31 | ns | |
| Turn-off Delay Time (td(off)) | 71 | ns | |
| Turn-off Fall Time (tf) | 99 | ns | |
| Turn-on Switching Loss (Eon) | 0.46 | mJ | |
| Turn-off Switching Loss (Eoff) | 0.41 | mJ | |
| Total Switching Loss (Ets) | 0.87 | mJ | |
| Input Capacitance (Cies) | 831 | pF | VCE=25V VGE=0V f = 1MHz |
| Output Capacitance (Coes) | 50 | pF | |
| Reverse Transfer Capacitance (Cres) | 7.5 | pF | |
| Diode Forward Voltage (VF) | 1.5 - 3.0 | V | IF=20A |
| Diode Reverse Recovery Time (trr) | 110 | ns | VCE = 400V IF= 20A Rg=15 |
| Diode peak Reverse Recovery Current (IRR) | 16.6 | A | |
| Diode Reverse Recovery Charge (Qrr) | 736 | nC |
2509021810_JIAENSEMI-JNG20T65KS_C51484245.pdf
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