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quality Power electronic phase control thyristor Infineon T3710N04TOF VT with high voltage and current ratings factory
quality Power electronic phase control thyristor Infineon T3710N04TOF VT with high voltage and current ratings factory

Power electronic phase control thyristor Infineon T3710N04TOF VT with high voltage and current ratings

Key Attributes
Model Number: T3710N04TOF VT
Product Custom Attributes
Mfr. Part #:
T3710N04TOF VT
Package:
BG-T11035-1
Product Description

Product Overview

The T3710N is a phase control thyristor designed for power electronic applications. It offers high voltage and current ratings, making it suitable for demanding industrial uses.

Product Attributes

  • Brand: AEC
  • Origin: Germany (implied by language and datasheet format)
  • Material: Si-pellet with pressure contact
  • Certifications: DIN IEC 60747-6

Technical Specifications

Parameter Symbol Value Unit Conditions
Maximum Rated Values
Repetitive peak forward off-state and reverse voltages VDRM, VRRM 200, 400, 600 V Tvj = -40C... Tvj max
Non-repetitive peak forward off-state voltage VDSM 200, 400, 600 V Tvj = -40C... Tvj max
Non-repetitive peak reverse voltage VRSM 250, 450, 650 V Tvj = +25C... Tvj max
Maximum RMS on-state current ITRMSM 7000 A
Average on-state current ITAVM 3710 A TC = 85 C
Average on-state current ITAVM 5060 A TC = 55 C, = 180sin, tP = 10 ms
RMS on-state current ITRMS 7950 A
Surge current ITSM 70000, 60000 A Tvj = 25 C, tP = 10 ms; Tvj = Tvj max, tP = 10 ms
It-value It 24500, 18000 10 As Tvj = 25 C, tP = 10 ms; Tvj = Tvj max, tP = 10 ms
Critical rate of rise of on-state current (diT/dt)cr 200 A/s f = 50 Hz, iGM = 1A, diG/dt = 1 A/s
Critical rate of rise of off-state voltage (dvD/dt)cr 1000 V/s Tvj = Tvj max, vD = 0,67 VDRM
Characteristic Values
On-state voltage vT 1.50, 0.96 V Tvj = Tvj max , iT = 15 kA; Tvj = Tvj max , iT = 4 kA
Threshold voltage V(TO) 0.75 V Tvj = Tvj max
Slope resistance rT 0.048 m Tvj = Tvj max
Gate trigger current IGT 250 mA Tvj = 25 C, vD = 12V
Gate trigger voltage VGT 1.5 V Tvj = 25 C, vD = 12V
Gate non-trigger current IGD 10, 5 mA Tvj = Tvj max , vD = 12V; Tvj = Tvj max , vD = 0,5 VDRM
Gate non-trigger voltage VGD 0.2 V Tvj = Tvj max , vD = 0,5 VDRM
Holding current IH 300 mA Tvj = 25C, vD = 12V
Latching current IL 1200 mA Tvj = 25C, vD = 12V, RGK 10
Forward off-state and reverse current iD, iR 200 mA Tvj = Tvj max vD = VDRM, vR = VRRM
Gate controlled delay time tgd 4 s DIN IEC 60747-6, Tvj = 25 C, iGM = 1 A, diG/dt = 1 A/s
Circuit commutated turn-off time tq typ. 200 s Tvj = Tvj max, iTM = ITAVM vRM = 100 V, vDM = 0,67 VDRM dvD/dt = 20 V/s, -diT/dt = 10 A/s
Thermal Properties
Thermal resistance, junction to case (180sin) RthJC 0.0125 C/W beidseitig / two-sided
Thermal resistance, junction to case (DC) RthJC 0.0117 C/W beidseitig / two-sided
Thermal resistance, junction to case (180sin) RthJC 0.0232 C/W Anode / anode
Thermal resistance, junction to case (DC) RthJC 0.0225 C/W Anode / anode
Thermal resistance, junction to case (180sin) RthJC 0.0250 C/W Kathode / cathode
Thermal resistance, junction to case (DC) RthJC 0.0245 C/W Kathode / cathode
Thermal resistance, case to heatsink RthCH 0.003, 0.006 C/W beidseitig / two-sides; einseitig / single-sides
Maximum junction temperature Tvj max 140 C
Operating temperature Tc op -40...+140 C
Storage temperature Tstg -40...+140 C
Mechanical Properties
Clamping force F 30...65 kN Si-pellet with pressure contact
Weight G typ. 900 g
Creepage distance 25 mm
Vibration resistance 50 m/s f = 50 Hz

2304140030_Infineon-T3710N04TOF-VT_C535346.pdf

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