NPN transistor Jilin Sino Microelectronics 3DD13003A for power amplifier and switching power supplies
Key Attributes
Model Number:
3DD13003A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
40W
Transition Frequency(fT):
4MHz
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
450V
Mfr. Part #:
3DD13003A
Package:
TO-92-FJ
Product Description
Product Overview
The 3DD13003A is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This RoHS-compliant product ensures high reliability.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Item | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | |
| Collector-Emitter Voltage (IB=0) | VCEO | 450 | V | |
| Emitter-Base Voltage | VEBO | 9 | V | |
| Collector Current (DC) | IC | 1.5 | A | |
| Collector Current (pulse) | ICP | 3.0 | A | |
| Total Dissipation (TO-92-FJ/TO-92-FJ-F1) | PC | 1 | W | |
| Total Dissipation (DPAK/IPAK) | PC | 10 | W | |
| Total Dissipation (TO-126) | PC | 20 | W | |
| Total Dissipation (TO-220) | PC | 40 | W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55~+150 | ||
| Breakdown Voltage (CEO) | V(BR)CEO | 450-500 | V | IC=10mA, IB=0 |
| Breakdown Voltage (CBO) | V(BR)CBO | 700-830 | V | IC=1mA, IE=0 |
| Breakdown Voltage (EBO) | V(BR)EBO | 9-13 | V | IE=1mA, IC=0 |
| Collector Cutoff Current | ICBO | - | 100 A | VCB=700V, IE=0 |
| Collector Cutoff Current | ICEO | - | 50 A | VCE=450V, IB=0 |
| Emitter Cutoff Current | IEBO | - | 10 A | VEB=7V, IC=0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 8-40 | V | VCE=10V, IC=200mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 4-8 | V | VCE=5V, IC=1.5A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15-0.8 | V | IC=0.5A, IB=0.1A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5-2.0 | V | IC=1.5A, IB=0.5A |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6-1.8 | V | IC=1.0A, IB=0.25A |
| Switching Time (fall) | tf | - | 0.7 S | VCC=24V, IC=0.5A, IB1=-IB2=0.1A |
| Transition Frequency | fT | 4 | MHz | VCE=10V, Ic=0.2A |
| Thermal Resistance (Junction Case TO-92-FJ/TO-92-FJ-F1) | Rth(j-c) | 49 | /W | |
| Thermal Resistance (Junction Case DPAK/IPAK) | Rth(j-c) | 12.5 | /W | |
| Thermal Resistance (Junction Case TO-126) | Rth(j-c) | 6.25 | /W | |
| Thermal Resistance (Junction Case TO-220) | Rth(j-c) | 3.125 | /W |
2409280102_Jilin-Sino-Microelectronics-3DD13003A_C5148290.pdf
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