power transistor Jilin Sino Microelectronics 3DD13003E1D 92 FJ for electronic ballast and lighting
Key Attributes
Model Number:
3DD13003E1D-92-FJ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD13003E1D-92-FJ
Package:
TO-92-3
Product Description
Product Overview
The 3DD13003E1D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant and available in TO-92 package with both standard and halogen-free options.
Product Attributes
- Brand: Jilin Sino-microelectronics co., Ltd
- Origin: China
- Material: Not specified
- Color: Not specified
- Certifications: RoHS (Halogen Free option available)
Technical Specifications
| Order Code | Marking | Halogen Free | Package | Packaging | IC (A) | VCEO (V) | PC (TO-92) (W) |
| 3DD13003E1D-O-T-B-A | 13003E1D | NO | TO-92 | Brede | 1.5 | 400 | 1 |
| 3DD13003E1D-O-T-N-C | 13003E1D | NO | TO-92 | Bag | 1.5 | 400 | 1 |
| 3DD13003E1D-R-T-B-A | 13003E1D | YES | TO-92 | Brede | 1.5 | 400 | 1 |
| 3DD13003E1D-R-T-N-C | 13003E1D | YES | TO-92 | Bag | 1.5 | 400 | 1 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min Value | Typ Value | Max Value | Unit |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | |||
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | 470 | V | ||
| Emitter-Base Voltage | VEBO | IE=1mA,Ic=0 | 9 | 16 | V | |
| Collector Current (DC) | IC | 1.5 | A | |||
| Collector Current (pulse) | ICP | 3.0 | A | |||
| Total Dissipation (TO-92) | PC | 1 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55~+150 | ||||
| Breakdown Voltage CEO | V(BR)CEO | Ic=10mA,IB=0 | 400 | 470 | V | |
| Breakdown Voltage CBO | V(BR)CBO | Ic=1mA,IE=0 | 700 | 800 | V | |
| Collector Cut-off Current | ICBO | VCB=700V, IE=0 | 5 | A | ||
| Emitter Cut-off Current | IEBO | VEB=7V, IC=0 | 5 | A | ||
| DC Current Gain | hFE | VCE=10V, IC=100mA | 19 | 22 | 25 | - |
| DC Current Gain | hFE | VCE=5V, IC=1.5A | 3.0 | 7.0 | - | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=0.5A, IB=100mA | 0.2 | 0.8 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=0.5A, IB=100mA | 0.9 | 1.2 | V | |
| Switching Time | ts | IC=0.1A | 2.5 | - | 4.5 | S |
Thermal Characteristic
| Parameter | Symbol | Value(min) | Value(max) | Unit |
| Thermal Resistance Junction Ambient (TO-92) | Rth(j-a) | - | 125 | /W |
2410121225_Jilin-Sino-Microelectronics-3DD13003E1D-92-FJ_C272503.pdf
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