Fast switching power transistor Jilin Sino Microelectronics 3DD13005MD220 for energy saving lighting
Key Attributes
Model Number:
3DD13005MD-220
Product Custom Attributes
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
75W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD13005MD-220
Package:
TO-220
Product Description
Product Overview
The 3DD13005MD is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Product Code: 3DD13005MD
- Halogen Free: NO
- Certifications: RoHS product
Technical Specifications
| Order Codes | Marking | Package | Packaging | IC (A) | VCEO (V) | PC (W) TO-220HF | PC (W) TO-220 |
| 3DD13005MD-O-HF-N-B | D13005MD | TO-220F | Tube | 4 | 400 | 35 | 75 |
| 3DD13005MD-O-Z-N-C | D13005MD | TO-220 | Bag | 4 | 400 | 35 | 75 |
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit | Test Conditions |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | |||
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | V | |||
| Emitter-Base Voltage | VEBO | 9 | V | |||
| Collector Current (DC) | IC | 4 | A | |||
| Collector Current (pulse) | ICP | 8 | A | Pulse Width = 5.0 ms, Duty Cycle < 10% | ||
| Base Current (DC) | IB | 2 | A | |||
| Base Current (pulse) | IBP | 4 | A | |||
| Total Dissipation (TO-220HF) | PC | 35 | W | |||
| Total Dissipation (TO-220) | PC | 75 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 400 | V | IC=10mA,IB=0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 700 | V | IC=1mA,IB=0 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 9 | V | IE=1mA,IC=0 | ||
| Collector Cut-off Current | ICBO | 100 | A | VCB=700V, IE=0 | ||
| Collector Cut-off Current | ICEO | 50 | A | VCE=400V,IB=0 | ||
| Emitter Cut-off Current | IEBO | 10 | A | VEB=9V, IC=0 | ||
| DC Current Gain | Hfe(1) | 8 | 50 | VCE =10V, IC=500mA | ||
| DC Current Gain | Hfe(2) | 5 | VCE =5V, IC=2A | |||
| Collector-Emitter Saturation Voltage | VCE(sat)(1) | 1.5 | V | IC=1A, IB=0.2A | ||
| Collector-Emitter Saturation Voltage | VCE(sat)(2) | 2.0 | V | IC=4A, IB=1A | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.8 | V | IC=2A, IB=0.5A | ||
| Fall Time | tf | 0.7 | S | |||
| Storage Time | ts | 4 | S | VCC=24V IC=2A,IB1=-IB2=0.4A | ||
| Transition Frequency | fT | 4 | MHz | VCE=10V, IC=0.5A |
| Thermal Resistance (Junction to Case) TO-220HF | Rth(j-c) | 3.57 | /W | |||
| Thermal Resistance (Junction to Case) TO-220 | Rth(j-c) | 1.67 | /W |
2411201841_Jilin-Sino-Microelectronics-3DD13005MD-220_C272477.pdf
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