RoHS compliant Jilin Sino Microelectronics 3DD13009K O C N B transistor for energy saving lamp applications
Key Attributes
Model Number:
3DD13009K-O-C-N-B
Product Custom Attributes
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
100W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
12A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD13009K-O-C-N-B
Package:
TO-220
Product Description
Product Overview
The 3DD13009K is a high voltage, fast-switching NPN power transistor designed for various power electronics applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This RoHS-compliant product ensures high reliability and environmental friendliness.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS product
- Halogen Free: NO
Technical Specifications
| Order Code | Marking | Package | Packaging | IC (A) | VCEO (V) | PC (TO-220C) (W) | PC (TO-3PB) (W) |
| 3DD13009K-O-C-N-B | D13009K | TO-220C | Tube | 12 | 400 | 100 | - |
| 3DD13009K-O-AB-N-B | D13009K | TO-3PB | Tube | 12 | 400 | - | 120 |
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit | Test Conditions |
| Collector-Emitter Voltage (VBE=0) | VCES | - | - | 700 | V | - |
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | - | - | V | - |
| Emitter-Base Voltage | VEBO | - | - | 9 | V | - |
| Collector Current (DC) | IC | - | - | 12 | A | - |
| Collector Current (pulse) | ICP | - | - | 24 | A | Pulse Width = 5.0 ms, Duty Cycle < 10% |
| Base Current (DC) | IB | - | - | 6 | A | - |
| Base Current (pulse) | IBP | - | - | 12 | A | - |
| Thermal Resistance Junction Case TO-220C | Rth(j-c) | - | - | 1.25 | /W | - |
| Thermal Resistance Junction Case TO-3PB | Rth(j-c) | - | - | 1.05 | /W | - |
| Junction Temperature | Tj | - | - | 150 | - | |
| Storage Temperature | Tstg | -55 | - | 150 | - | |
| Breakdown Voltage CEO | V(BR)CEO | 400 | - | - | V | IC=10mA,IB=0 |
| Breakdown Voltage CBO | V(BR)CBO | 700 | - | - | V | IC=1mA,IB=0 |
| Breakdown Voltage EBO | V(BR)EBO | 9 | - | - | V | IE=1mA,IC=0 |
| Collector Cut-off Current | ICBO | - | - | 100 | A | VCB=700V, IE=0 |
| Collector Cut-off Current | ICEO | - | - | 50 | A | VCE=400V,IB=0 |
| Emitter Cut-off Current | IEBO | - | - | 10 | A | VEB=9V, IC=0 |
| DC Current Gain | Hfe(1) | 8 | - | 40 | - | VCE =5V, IC=5A |
| DC Current Gain | Hfe(2) | 5 | - | - | - | VCE =5V, IC=8A |
| Collector-Emitter Saturation Voltage | VCE(sat)(1) | - | - | 1.2 | V | IC=5A, IB=1A |
| Collector-Emitter Saturation Voltage | VCE(sat)(2) | - | - | 1.8 | V | IC=8A, IB=1.6A |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.8 | V | IC=8A, IB=1.6A |
| Fall Time | tf | - | - | 0.7 | S | - |
| Storage Time | ts | - | - | 3 | S | VCC=24V IC=5A,IB1=-IB2=1A |
| Transition Frequency | fT | 4 | - | - | MHz | VCE=10V, IC=0.5A |
2411201842_Jilin-Sino-Microelectronics-3DD13009K-O-C-N-B_C161206.pdf
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