N channel MOSFET Jilin Sino Microelectronics JCS4N70FC 220MF featuring 100 percent avalanche testing
Key Attributes
Model Number:
JCS4N70FC-220MF
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
92pF
Input Capacitance(Ciss):
950pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
JCS4N70FC-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS4N70C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, fast switching speeds, and improved dv/dt capability, with 100% avalanche testing for reliability. This RoHS-compliant product is available in various packages.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS, Halogen Free (optional)
Technical Specifications
| Order Code | Marking | Package | Halogen Free | Device Weight (typ) | ID (A) | VDSS (V) | RDS(ON)-max (@VGS=10V) () | Qg-typ (nC) |
| JCS4N70VC-O-V-N-B | JCS4N70V | IPAK | NO | 0.35 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70VC-R-V-N-B | JCS4N70V | IPAK | YES | 0.35 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70VC-R-VN2-N-B | JCS4N70V | TO-251N-S2 | YES | 0.35 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70RC-O-R-N-B | JCS4N70R | DPAK | NO | 0.30 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70RC-O-R-N-A | JCS4N70R | DPAK | NO | 0.30 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70MFC-O-MF-N-B | JCS4N70MF | TO-126F | NO | 1.50 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70SC-O-S-N-B | JCS4N70S | TO-263 | NO | 1.37 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70SC-O-S-N-A | JCS4N70S | TO-263 | NO | 1.37 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70BC-O-B-N-B | JCS4N70B | TO-262 | NO | 1.71 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70CC-O-C-N-B | JCS4N70C | TO-220C | NO | 2.15 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70FC-O-F-N-B | JCS4N70F | TO-220MF | NO | 2.20 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70FC-O-F1-N-B | JCS4N70F | TO-220MF-K1 | NO | 1.78 g | 4.0 | 700 | 2.8 | 16 |
| JCS4N70FC-O-F2-N-B | JCS4N70F | TO-220MF-K2 | NO | 1.78 g | 4.0 | 700 | 2.8 | 16 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | JCS4N70MFC | JCS4N70VC/RC | JCS4N70S C/BC/CC | JCS4N70FC |
| Drain-Source Voltage | VDSS | 700 | V | ||||
| Drain Current -continuous (TC=25) | ID | 4.0 | A | ||||
| Drain Current -continuous (TC=100) | ID | 2.5* | A | ||||
| Drain Current - pulse (note 1) | IDM | 16* | A | ||||
| Gate-Source Voltage | VGSS | 30 | V | ||||
| Single Pulsed Avalanche Energy (note 2) | EAS | 265 | mJ | ||||
| Avalanche Current (note 1) | IAR | 4.0 | A | ||||
| Repetitive Avalanche Current (note 1) | EAR | 11.0 | mJ | ||||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.0 | V/ns | ||||
| Power Dissipation (TC=25) | PD | 26 / 51 / 100 / 33 | W | 26 | 51 | 100 | 33 |
| Power Dissipation -Derate above 25 | 0.21 / 0.39 / 0.80 / 0.26 | W/ | 0.21 | 0.39 | 0.80 | 0.26 | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 700 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.66 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=700V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=560V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2A | - | 2.6 | 2.8 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2A (note 4) | - | 3.6 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 790 | 950 | pF |
| Output capacitance | Coss | - | 67 | 92 | pF | |
| Reverse transfer capacitance | Crss | - | 14 | 17 | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=350V,ID=4A,RG=25 (note 4,5) | - | 30 | 50 | ns |
| Turn-On rise time | tr | - | 65 | 110 | ns | |
| Turn-Off delay time | td(off) | - | 50 | 130 | ns | |
| Turn-Off Fall time | tf | - | 45 | 90 | ns | |
| Total Gate Charge | Qg | VDS =560V , ID=4A VGS =10V (note 4,5) | - | 16 | 20 | nC |
| Gate-Source charge | Qgs | - | 2.0 | - | nC | |
| Gate-Drain charge | Qgd | - | 7.0 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 4 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 340 | - | ns |
| Reverse recovery charge | Qrr | - | 2.65 | - | C | |
Thermal Characteristics
| Parameter | Symbol | Max | Unit | JCS4N70MFC | JCS4N70VC/RC | JCS4N70 SC/BC/CC | JCS4N70 FC |
| Thermal Resistance, Junction to Case | Rth(j-c) | 4.8 / 2.50 / 1.25 / 3.79 | /W | 4.8 | 2.50 | 1.25 | 3.79 |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 / 83 / 62.5 / 62.5 | /W | 110 | 83 | 62.5 | 62.5 |
2411201842_Jilin-Sino-Microelectronics-JCS4N70FC-220MF_C272581.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
