N Channel MOSFET Transistor ISC IPP076N15N5 Suitable for High Frequency Switching and Rectification
Key Attributes
Model Number:
IPP076N15N5
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
112A
RDS(on):
7.6mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4.6V@160uA
Type:
N-Channel
Pd - Power Dissipation:
214W
Mfr. Part #:
IPP076N15N5
Package:
TO-220C
Product Description
Product Overview
The IPP076N15N5 is an N-Channel MOSFET Transistor from INCHANGE Semiconductor. It features low static drain-source on-resistance (RDS(on) 7.6m), enhancement mode operation, and fast switching speed. It is 100% avalanche tested and offers minimum lot-to-lot variations for robust performance. Ideal for high-frequency switching and synchronous rectification applications.
Product Attributes
- Brand: ISC / ISCsemi
- Origin: INCHANGE Semiconductor
- Product Name: N-Channel MOSFET Transistor
- Model: IPP076N15N5 / IIPP076N15N5
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V; ID =1mA | 150 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS; ID =160A | 3 | 4.6 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS=10V; ID=56A | 7.6 | m | ||
| IGSS | Gate-Source Leakage Current | VGS= 20V;VDS=0V | 0.1 | A | ||
| IDSS | Drain-Source Leakage Current | VDS=120V; VGS= 0V | 1 | A | ||
| VSD | Diode forward voltage | IF=56A; VGS = 0V | 1.1 | V | ||
| VDSS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | 112 | A | |||
| IDM | Drain Current-Single Pulsed | 448 | A | |||
| PD | Total Dissipation @TC=25 | 214 | W | |||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| Tstg | Storage Temperature | -55 | 175 | |||
| Rth(ch-c) | Channel-to-case thermal resistance | 0.7 | /W | |||
| Rth(ch-a) | Channel-to-ambient thermal resistance | 62 | /W |
2411220601_ISC-IPP076N15N5_C2976486.pdf
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